Semiconductor Light Emitting Device
First Claim
1. A semiconductor light-emitting device, comprising:
- a plurality of semiconductor layers composed of a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, for generating light via electron-hole recombination, wherein the plurality of semiconductor layers are grown sequentially using a growth substrate;
a first electrode for providing either electrons or holes to the first semiconductor layer;
a non-conductive reflective film formed over the second semiconductor layer to reflect light from the active layer towards the first semiconductor layer which is on the growth substrate side; and
a finger electrode formed between the plurality of semiconductor layers and the non-conductive reflective film, which is extended so as to provide remaining electrons or holes to the second semiconductor layer, which is in electrical communication with the second semiconductor layer, and which has an electrical connection for receiving the remaining electrons or holes.
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Accused Products
Abstract
The present disclosure relates to a semiconductor light-emitting device, comprising: a plurality of semiconductor layers grown sequentially using a growth substrate; a first electrode for providing either electrons or holes to a first semiconductor layer; a non-conductive reflective film formed over a second semiconductor layer to reflect light from an active layer towards the first semiconductor layer which is on the growth substrate side; and a finger electrode formed between the plurality of semiconductor layers and the non-conductive reflective film, which is extended so as to provide remaining electrons or holes to the second semiconductor layer, which is in electrical communication with the second semiconductor layer, and which has an electrical connection for receiving the remaining electrons or holes.
23 Citations
20 Claims
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1. A semiconductor light-emitting device, comprising:
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a plurality of semiconductor layers composed of a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, for generating light via electron-hole recombination, wherein the plurality of semiconductor layers are grown sequentially using a growth substrate; a first electrode for providing either electrons or holes to the first semiconductor layer; a non-conductive reflective film formed over the second semiconductor layer to reflect light from the active layer towards the first semiconductor layer which is on the growth substrate side; and a finger electrode formed between the plurality of semiconductor layers and the non-conductive reflective film, which is extended so as to provide remaining electrons or holes to the second semiconductor layer, which is in electrical communication with the second semiconductor layer, and which has an electrical connection for receiving the remaining electrons or holes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification