SEMICONDUCTOR LIGHT EMITTING DEVICE
First Claim
1. A semiconductor light-emitting device, comprising:
- a substrate;
a light-emitting structure that comprises;
a first conductive-type semiconductor layer, an active layer, a second conductive-type semiconductor layer are disposed on the substrate, a first region, a second region, and a light radiation surface on one of the first and second conductive-type semiconductor layers,wherein only the first conductive-type semiconductor layer remains on the substrate in the first region when a part of the second conductive-type semiconductor layer and a part of the active layer are removed,wherein the active layer is disposed between the first and second conductive-type semiconductor layers on the substrate in the second region; and
a first electrode and a second electrode which are electrically connected to the first and second conductive-type semiconductor layers respectively so that the first and second electrodes are connected to a different conductive-type semiconductor layer from each other,wherein the second electrode is disposed in the first region on the light radiation surface of the light-emitting structure.
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Accused Products
Abstract
There is provided a semiconductor light-emitting device having a small size and high light efficiency. The semiconductor light-emitting device includes a substrate; a light-emitting structure that includes a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer are formed on the substrate, wherein the light-emitting structure comprises a first region, a second region, and a light radiation surface on one of the first and second conductive-type semiconductor layers, wherein only the first conductive-type semiconductor layer remains on the substrate in the first region as a part of the second conductive-type semiconductor layer and a part of the active layer are removed, wherein the active layer is disposed between the first and second conductive-type semiconductor layers on the substrate in the second region, a fluorescent body that covers at least a part of the second region on the light radiation surface of the light-emitting structure, and a first electrode and a second electrode which are electrically respectively connected to the first and second conductive-type semiconductor layers so that the first and second electrodes may be connected to a different conductive-type semiconductor layer from each other, wherein the second electrode is formed in the first region on the light radiation surface of the light-emitting structure.
157 Citations
20 Claims
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1. A semiconductor light-emitting device, comprising:
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a substrate; a light-emitting structure that comprises; a first conductive-type semiconductor layer, an active layer, a second conductive-type semiconductor layer are disposed on the substrate, a first region, a second region, and a light radiation surface on one of the first and second conductive-type semiconductor layers, wherein only the first conductive-type semiconductor layer remains on the substrate in the first region when a part of the second conductive-type semiconductor layer and a part of the active layer are removed, wherein the active layer is disposed between the first and second conductive-type semiconductor layers on the substrate in the second region; and a first electrode and a second electrode which are electrically connected to the first and second conductive-type semiconductor layers respectively so that the first and second electrodes are connected to a different conductive-type semiconductor layer from each other, wherein the second electrode is disposed in the first region on the light radiation surface of the light-emitting structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor light-emitting device, comprising:
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a conductive substrate; a light-emitting structure that comprises; a first conductive-type semiconductor layer, an active layer, a second conductive-type semiconductor layer are disposed on the substrate, a first region and a second region, wherein only the first conductive-type semiconductor layer remains on the substrate in the first region when a part of the second conductive-type semiconductor layer and a part of the active layer are removed, and wherein the active layer is disposed between the first and second conductive-type semiconductor layers on the substrate in the second region; an insulating layer covering a side of the active layer which is exposed at a boundary between the first and second regions; a pad electrode disposed in the first region and is electrically connected to the second conductive-type semiconductor layer; and a fluorescent body covering the second region, wherein the conductive substrate is electrically connected to the first conductive-type semiconductor layer. - View Dependent Claims (15)
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16. A semiconductor light-emitting package comprising a semiconductor light-emitting device, the semiconductor light-emitting device including:
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a conductive substrate; a light-emitting structure that comprises; a first conductive-type semiconductor layer, an active layer, a second conductive-type semiconductor layer are disposed on the substrate, a first region and a second region, wherein only the first conductive-type semiconductor layer remains on the substrate in the first region when a part of the second conductive-type semiconductor layer and a part of the active layer are removed, and wherein the active layer is disposed between the first and second conductive-type semiconductor layers on the substrate in the second region; an insulating layer covering a side of the active layer which is exposed at a boundary between the first and second regions; a pad electrode disposed in the first region and is electrically connected to the second conductive-type semiconductor layer; and a fluorescent body covering the second region, wherein the conductive substrate is electrically connected to the first conductive-type semiconductor layer. - View Dependent Claims (17, 18, 19, 20)
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Specification