SEMICONDUCTOR DEVICE
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Abstract
An object of the invention is to improve the accuracy of light detection in a photosensor, and to increase the light-receiving area of the photosensor. The photosensor includes: a light-receiving element which converts light into an electric signal; a first transistor which transfers the electric signal; and a second transistor which amplifies the electric signal. The light-receiving element includes a silicon semiconductor, and the first transistor includes an oxide semiconductor. The light-receiving element is a lateral junction photodiode, and an n-region or a p-region included in the light-receiving element overlaps with the first transistor.
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Citations
19 Claims
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1. (canceled)
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2. A semiconductor device comprising:
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a light-receiving element; a first transistor, one of a source and a drain of the first transistor being electrically connected to an output terminal of the light-receiving element; and a second transistor, a gate of the second transistor being electrically connected to the other of the source and the drain of the first transistor, wherein a channel formation region of the first transistor comprises an oxide semiconductor layer, and wherein the first transistor is provided over the second transistor with an insulating film provided therebetween. - View Dependent Claims (3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a light-receiving element; a first transistor, one of a source and a drain of the first transistor being electrically connected to an output terminal of the light-receiving element; and a second transistor, a gate of the second transistor being electrically connected to the other of the source and the drain of the first transistor, wherein a channel formation region of the first transistor comprises an oxide semiconductor layer, wherein the first transistor is provided over the second transistor with an insulating film provided therebetween, and wherein the first transistor is provided over the light-receiving element with the insulating film provided therebetween. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a light-receiving element comprising an n-region and a p-region; a first transistor, one of a source and a drain of the first transistor being electrically connected to an output terminal of the light-receiving element; and a second transistor, a gate of the second transistor being electrically connected to the other of the source and the drain of the first transistor, wherein a channel formation region of the first transistor comprises an oxide semiconductor layer, wherein the first transistor is provided over the second transistor with an insulating film provided therebetween, wherein the first transistor is provided over the light-receiving element with the insulating film provided therebetween, and wherein one of the n-region and the p-region and the oxide semiconductor layer overlap with each other. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification