LIGHT EMITTING DEVICE

• US 20140225143A1
• Filed: 02/10/2014
• Published: 08/14/2014
• Est. Priority Date: 02/12/2013
• Status: Active Grant

• Current Assignee: Citizen Watch Co Limited (Citizen Electronics Company Limited), Nichia Corporation
• Original Assignee: Citizen Electronics Company Limited, Citizen Holdings Co., Ltd., Nichia Corporation
• Inventors: KUSUSE, Takeshi, OGAWA, Toshiaki, MINATO, Shunsuke, OYAMADA, Nodoka
• Granted Patent: US 9,293,674 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 24/96 the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/12036 PN diode
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/3511 Warping
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A semiconductor device has a light emitting element, and a resin layer; the light emitting element includes a semiconductor laminated body in which a first semiconductor layer and a second semiconductor layer are laminated in sequence, a second electrode connected to the second semiconductor layer on an upper surface of the second semiconductor layer that forms an upper surface of the semiconductor laminated body, and a first electrode connected to the first semiconductor layer on an upper surface of the first semiconductor layer in which a portion of the second semiconductor layer on one surface of the semiconductor laminated body is removed and a portion of the first semiconductor layer is exposed; and the resin layer is configured to cover at least a side surface of the light emitting element, and an upper surface of the resin layer is lower than the upper surface of the semiconductor laminated body.

Claims

1. A light emitting device comprising

a light emitting element,

a first outer connection electrode and a second outer connection electrode, and

a resin layer;

the light emitting element includes

a semiconductor laminated body in which a first semiconductor layer and a second semiconductor layer are laminated in sequence,

a second electrode connected to the second semiconductor layer on an upper surface of the second semiconductor layer that forms an upper surface of the semiconductor laminated body, and

a first electrode connected to the first semiconductor layer on an upper surface of the first semiconductor layer that is exposed by removal a portion of the second semiconductor layer on one surface of the semiconductor laminated body;

the first external connection electrode and the second external connection electrode are respectively connected to the first electrode and the second electrode of the light emitting element; and

the resin layer is configured to cover at least a side surface of the light emitting element, and

an upper surface of the resin layer is lower than the upper surface of the semiconductor laminated body.

2. The light emitting device of according to claim 1, wherein

the resin layer is a layer which includes a fluorescent material or a filler.

3. The light emitting device of according to claim 1, wherein

the resin layer exposes a portion of a side surface of the semiconductor laminated body.

4. The light emitting device of according to claim 1, wherein

mounting surfaces of the first outer connection electrode and the second outer connection electrode share a same plane or an approximately same plane.

5. The light emitting device of according to claim 1, wherein

the first electrode includes a first ohmic electrode that is in contact with the first semiconductor layer, and a first electrode layer that is connected to at least a portion of the first ohmic electrode, and

the second electrode includes a second ohmic electrode that is in contact with the second semiconductor layer, and a second electrode layer that is connected to at least a portion of the second ohmic electrode.

6. The light emitting device of according to claim 5, further comprising

an insulating film that includes through-holes and is disposed on the first ohmic electrode and the second ohmic electrode, and

the first electrode layer and the second electrode layer are respectively connect with the first ohmic electrode and the second ohmic electrode through the through-holes.

7. The light emitting device of according to claim 5, further comprising

an interlayer insulating film that includes through-holes and is disposed on the first electrode layer and the second electrode layer, and

the first outer connection electrode and the second connection electrode are respectively connect with the first electrode layer and the second electrode layer through the through-holes.

8. The light emitting device of according to claim 5, wherein

the first electrode layer and the second electrode layer respectively have

a connection portion, and

an extension portion that extends from the connection portion and narrows from the connection portion in a plane view.

9. The light emitting device of according to claim 1, wherein

the first electrode and the exposed first semiconductor layer are disposed on an inner side of the semiconductor laminated body in a plane view.

10. The light emitting device of according to claim 1, wherein

the first outer connection electrode and the second outer connection electrode are respectively disposed to cover an area above the second semiconductor layer from an area above the first semiconductor layer.

11. The light emitting device of according to claim 1, further comprising

a second resin layer that contains a fluorescent material on a lower surface which is other side to an upper surface of the of the light emitting element.