SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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Accused Products
Abstract
A semiconductor device includes a substrate having a first region and a second region, first and second gate electrodes disposed on the first and second regions, respectively, and first and second source/drain regions disposed on at least one side of the first and second gate electrodes, respectively. The device further includes first and second silicide regions in the first and second source/drain regions, respectively. A contact area between the first silicide region and the first source/drain region is differs in size from a contact area between the second silicide region and the second source/drain region. Methods of fabricating such devices are also provided.
16 Citations
16 Claims
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1-7. -7. (canceled)
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8. A method of fabricating a semiconductor device, the method comprising:
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providing a substrate including a first region having a first gate electrode and a first source/drain region disposed adjacent the first gate electrode, and a second region having a second gate electrode and a second source/drain region disposed adjacent the second gate electrode; forming a first contact hole having a first depth in the first source/drain region; forming a first silicide region in the first contact hole; forming a second contact hole having a second depth different from the first depth in the second source/drain region; and forming a second silicide region in the second contact hole. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16-19. -19. (canceled)
Specification