RETENTION-DRIFT-HISTORY-BASED NON-VOLATILE MEMORY READ THRESHOLD OPTIMIZATION
First Claim
1. A method comprising:
- recording a sampled value of a voltage drift reference timestamp associated with programming a particular one of a plurality of groups of pages of a non-volatile memory; and
determining a voltage threshold, of a reading of at least some of the particular group of pages programmed, based at least in part on the recorded sampled value of the voltage drift reference timestamp and a sampled value of the voltage drift reference timestamp associated with the reading.
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Accused Products
Abstract
An SSD controller dynamically adjusts read thresholds in an NVM to reduce errors due to device threshold voltage distribution shifts, thus improving performance, reliability, and/or cost of a storage sub-system, such as an SSD. A retention drift clock uses one or more reference pages (or ECC units or blocks) on one or more NVM die as read threshold over time/temperature references, and uses a function of those values as a measure of drift (over time/temperature). At some initial time, the one or more reference pages are programmed and an initial read threshold is measured for each of the one or more reference pages. In some embodiments, read threshold values are averaged among one or more of: all references pages on the same die; and all reference pages in the same one or more die in an I/O device.
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Citations
34 Claims
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1. A method comprising:
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recording a sampled value of a voltage drift reference timestamp associated with programming a particular one of a plurality of groups of pages of a non-volatile memory; and determining a voltage threshold, of a reading of at least some of the particular group of pages programmed, based at least in part on the recorded sampled value of the voltage drift reference timestamp and a sampled value of the voltage drift reference timestamp associated with the reading. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. An apparatus comprising:
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means for recording a sampled value of a voltage drift reference timestamp associated with programming a particular one of a plurality of groups of pages of a non-volatile memory; and means for determining a voltage threshold, of a reading of at least some of the particular group of pages programmed, based at least in part on the recorded sampled value of the voltage drift reference timestamp and a sampled value of the voltage drift reference timestamp associated with the reading. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25)
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26. A non-transitory tangible computer readable medium having a set of instructions stored therein that when executed by a processing element cause the processing element to perform operations comprising:
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recording a sampled value of a voltage drift reference timestamp associated with programming a particular one of a plurality of groups of pages of a non-volatile memory; and determining a voltage threshold, of a reading of at least some of the particular group of pages programmed, based at least in part on the recorded sampled value of the voltage drift reference timestamp and a sampled value of the voltage drift reference timestamp associated with the reading. - View Dependent Claims (27, 28, 29, 30, 31, 32, 33, 34)
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Specification