Direct band gap wurtzite semiconductor nanowires
First Claim
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1. A method for wurtzite semiconductor growth, the method comprising:
- providing vapor phase epitaxy (VPE) precursors for a first composition including a Gallium (Ga) precursor as a group III species and a Phosphorus (P) precursor as a group V species;
performing VPE of the first composition having a hexagonal crystal structure with a direct band gap.
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Abstract
Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is provided. Such material has a direct band gap and is therefore much more useful for optoelectronic devices than conventional GaP and GaP alloys having the zincblende crystal structure and having an indirect band gap.
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Citations
18 Claims
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1. A method for wurtzite semiconductor growth, the method comprising:
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providing vapor phase epitaxy (VPE) precursors for a first composition including a Gallium (Ga) precursor as a group III species and a Phosphorus (P) precursor as a group V species; performing VPE of the first composition having a hexagonal crystal structure with a direct band gap. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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