IMAGING DEVICE AND METHOD FOR MANUFACTURING IMAGING DEVICE

• US 20140231782A1
• Filed: 04/28/2014
• Published: 08/21/2014
• Est. Priority Date: 10/31/2011
• Status: Active Grant

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: IMAI, Shinji, NAKATANI, Toshihiro
• Granted Patent: US 9,142,594 B2
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H10K 30/65 Light-sensitive field-effect devices, e.g. phototransistors
• CPC Class Codes: H10K 30/88 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 39/32 Organic image sensors
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

An imaging device includes a substrate, lower electrodes formed on the substrate, an organic layer formed on the lower electrodes and generating electric charges in response to irradiation with light, an upper electrode formed on the organic layer and transmitting the light, a protective film formed on the upper electrode, and a patterned organic film formed on the protective film. The protective film is composed of at least one layer and has a total thickness of 30 to 500 nm. The protective film of a single layer type has an internal stress of −50 MPa to +60 MPa in the whole of the protective film.

Claims

1. An imaging device comprising:

a substrate;

lower electrodes formed on the substrate;

an organic layer formed on the lower electrodes and adapted to generate electric charges in response to irradiation with light;

an upper electrode formed on the organic layer and adapted to transmit the light;

a protective film formed on the upper electrode; and

a patterned organic film formed on the protective film,

wherein the protective film comprises at least one layer and has a total thickness of 30 to 500 nm,

wherein the protective film of a single layer type has an internal stress of −

50 MPa to +60 MPa in a whole of the protective film,

wherein in the protective film of a two-layer type including a lower protective film and an upper protective film, the lower protective film has a thickness of 50 nm or less, and when the lower protective film is thinner than the upper protective film, the internal stress in the whole of the protective film satisfies an expression;

−

4.6x−

50≦

y≦

−

1.67x+60 when x is in a range of 0<

x<

15 and satisfies an expression;

−

1.25x−

100≦

y<

0 when x is in a range of 15≦

x≦

50, where the thickness of the lower protective film is denoted by x (nm) and the internal stress in the whole of the protective film is denoted by y (MPa), and

wherein, when the lower protective film is thicker than the upper protective film, the internal stress in the whole of the protective film is in a range of 0<

y≦

+115 when x is in a range of 15<

x≦

50.

2. The imaging device according to claim 1, wherein the protective film comprises two layers.

4. The imaging device according to claim 1, wherein the protective film of the single layer type comprises a silicon oxynitride film.

5. The imaging device according to claim 1, wherein in the protective film of the two-layer type, the upper protective film comprises a silicon oxynitride film.

6. The imaging device according to claim 1, wherein the lower protective film comprises aluminum oxide.

7. The imaging device according to claim 1,

wherein the light includes at least visible light,

wherein the organic layer generates the electric charges in response to the radiation with the light including at least the visible light, and

wherein the upper electrode comprises a conductive material which is transparent to the light including at least the visible light.

8. The imaging device according to claim 2,

wherein the light includes at least visible light,

wherein the organic layer generates the electric charges in response to the radiation with the light including at least the visible light, and

wherein the upper electrode comprises a conductive material which is transparent to the light including at least the visible light.

10. The imaging device according to claim 1, wherein the organic layer comprises a photoelectric conversion layer formed on a side closer to the upper electrode and adapted to generate the electric charges in accordance with an amount of received light and an electron blocking layer formed on a side closer to the lower electrodes and adapted to suppress injection of electrons into the photoelectric conversion layer from the lower electrodes.

11. The imaging device according to claim 2, wherein the organic layer comprises a photoelectric conversion layer formed on a side closer to the upper electrode and adapted to generate the electric charges in accordance with an amount of received light and an electron blocking layer formed on a side closer to the lower electrodes and adapted to suppress injection of electrons into the photoelectric conversion layer from the lower electrodes.

13. The imaging device according to claim 1, wherein an organic thin film is formed between the protective film and the patterned organic film.

14. The imaging device according to claim 13, wherein the organic thin film has a thickness of 10 to 200 nm.

3. An imaging device comprising:

a substrate;

lower electrodes formed on the substrate;

an organic layer formed on the lower electrodes and adapted to generate electric charges in response to irradiation with light;

an upper electrode formed on the organic layer and adapted to transmit the light;

a protective film formed on the upper electrode; and

a patterned organic film formed on the protective film,

wherein the protective film comprises two layers including a lower protective film and an upper protective film and has a total thickness of 30 to 500 nm,

wherein the lower protective film has a thickness of at least 15 nm but 50 nm or less,

wherein, when the lower protective film is thinner than the upper protective film, an internal stress in a whole of the protective film satisfies an expression;

−

1.25x−

100≦

y<

0, where the thickness of the lower protective film is denoted by x (nm) and the internal stress in the whole of the protective film is denoted by y (MPa), and

wherein, when the lower protective film is thicker than the upper protective film, the internal stress in the whole of the protective film is in a range of 0<

y≦

+115 when x is in a range of 15<

x≦

50.

9. The imaging device according to claim 3,

wherein the light includes at least visible light,

wherein the organic layer generates the electric charges in response to the radiation with the light including at least the visible light, and

wherein the upper electrode comprises a conductive material which is transparent to the light including at least the visible light.

12. The imaging device according to claim 3, wherein the organic layer comprises a photoelectric conversion layer formed on a side closer to the upper electrode and adapted to generate the electric charges in accordance with an amount of received light and an electron blocking layer formed on a side closer to the lower electrodes and adapted to suppress injection of electrons into the photoelectric conversion layer from the lower electrodes.

15. An imaging device comprising:

a substrate;

lower electrodes formed on the substrate;

an organic layer formed on the lower electrodes and adapted to generate electric charges in response to irradiation with light;

an upper electrode formed on the organic layer and adapted to transmit the light;

a protective film formed on the upper electrode;

a patterned organic film formed on the protective film; and

an organic thin film formed by coating between the protective film and the patterned organic film,

wherein the protective film comprises at least one layer and has a total thickness of 30 to 500 nm.

16. The imaging device according to claim 15,

wherein the light includes at least visible light,

wherein the organic layer generates the electric charges in response to the irradiation with the light including at least the visible light, and

wherein the upper electrode comprises a conductive material which is transparent to the light including at least the visible light.

17. The imaging device according to claim 15, wherein the organic layer comprises a photoelectric conversion layer formed on a side closer to the upper electrode and adapted to generate the electric charges in accordance with an amount of received light and an electron blocking layer formed on a side closer to the lower electrodes and adapted to suppress injection of electrons into the photoelectric conversion layer from the lower electrodes.

18. A method for manufacturing an imaging device comprising:

a substrate;

lower electrodes formed on the substrate;

an organic layer formed on the lower electrodes and adapted to generate electric charges in response to irradiation with light;

an upper electrode formed on the organic layer and adapted to transmit the light;

a protective film formed on the upper electrode; and

a patterned organic film formed on the protective film,

the protective film comprising a lower protective film formed on the upper electrode and an upper protective film formed on the lower protective film,

the method comprising;

a step of forming the lower protective film at a substrate temperature of 100°

C. to 200°

C. using an atomic layer deposition process; and

a step of forming the upper protective film at a substrate temperature of 150°

C. to 250°

C. using a plasma CVD process.