SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- an insulative substrate;
an oxide semiconductor layer located above the insulative substrate and including a channel region, and a source region and a drain region which are located on both sides of the channel region;
a first insulation film covering the channel region and exposing the source region and the drain region;
a first conductive layer including a gate electrode located on the first insulation film, and a first terminal electrode located above the insulative substrate and spaced apart from the gate electrode;
a second insulation film covering the first conductive layer, the source region and the drain region;
a second conductive layer including a source electrode which is put in contact with the source region, a drain electrode which is put in contact with the drain region, and a second terminal electrode which is opposed to the first terminal electrode via the second insulation film; and
a third insulation film interposed between the second insulation film, and the source electrode and the drain electrode.
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Accused Products
Abstract
According to one embodiment, a semiconductor device includes, an oxide semiconductor layer including a channel region, and a source region and a drain region, a first insulation film covering the channel region and exposing the source region and the drain region, a first conductive layer including a gate electrode, and a first terminal electrode, a second insulation film covering the first conductive layer, the source region and the drain region, a second conductive layer including a source electrode, a drain electrode, and a second terminal electrode which is opposed to the first terminal electrode via the second insulation film, and a third insulation film interposed between the second insulation film, and the source electrode and the drain electrode.
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Citations
10 Claims
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1. A semiconductor device comprising:
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an insulative substrate; an oxide semiconductor layer located above the insulative substrate and including a channel region, and a source region and a drain region which are located on both sides of the channel region; a first insulation film covering the channel region and exposing the source region and the drain region; a first conductive layer including a gate electrode located on the first insulation film, and a first terminal electrode located above the insulative substrate and spaced apart from the gate electrode; a second insulation film covering the first conductive layer, the source region and the drain region; a second conductive layer including a source electrode which is put in contact with the source region, a drain electrode which is put in contact with the drain region, and a second terminal electrode which is opposed to the first terminal electrode via the second insulation film; and a third insulation film interposed between the second insulation film, and the source electrode and the drain electrode. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising:
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an insulative substrate; an oxide semiconductor layer located above the insulative substrate and including a channel region, and a source region and a drain region which are located on both sides of the channel region; a first terminal electrode located above the insulative substrate and formed of the same material as the oxide semiconductor layer; a first insulation film covering the channel region and exposing the source region and the drain region; a first conductive layer including a gate electrode located on the first insulation film; a second insulation film covering the first conductive layer, the first terminal electrode, the source region and the drain region; a second conductive layer including a source electrode which is put in contact with the source region, a drain electrode which is put in contact with the drain region, and a second terminal electrode which is opposed to the first terminal electrode via the second insulation film; and a third insulation film interposed between the second insulation film, and the source electrode and the drain electrode. - View Dependent Claims (7, 8, 9, 10)
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Specification