SEMICONDUCTOR DEVICE

• US 20140231797A1
• Filed: 01/30/2014
• Published: 08/21/2014
• Est. Priority Date: 02/20/2013
• Status: Active Grant

• Current Assignee: Japan Display Incorporated
• Original Assignee: Japan Display Incorporated
• Inventors: MATSUURA, Yuki
• Granted Patent: US 9,129,864 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors

Abstract

According to one embodiment, a semiconductor device includes, an oxide semiconductor layer including a channel region, and a source region and a drain region, a first insulation film covering the channel region and exposing the source region and the drain region, a first conductive layer including a gate electrode, and a first terminal electrode, a second insulation film covering the first conductive layer, the source region and the drain region, a second conductive layer including a source electrode, a drain electrode, and a second terminal electrode which is opposed to the first terminal electrode via the second insulation film, and a third insulation film interposed between the second insulation film, and the source electrode and the drain electrode.

Claims

1. A semiconductor device comprising:

an insulative substrate;

an oxide semiconductor layer located above the insulative substrate and including a channel region, and a source region and a drain region which are located on both sides of the channel region;

a first insulation film covering the channel region and exposing the source region and the drain region;

a first conductive layer including a gate electrode located on the first insulation film, and a first terminal electrode located above the insulative substrate and spaced apart from the gate electrode;

a second insulation film covering the first conductive layer, the source region and the drain region;

a second conductive layer including a source electrode which is put in contact with the source region, a drain electrode which is put in contact with the drain region, and a second terminal electrode which is opposed to the first terminal electrode via the second insulation film; and

a third insulation film interposed between the second insulation film, and the source electrode and the drain electrode.

2. The semiconductor device of claim 1, wherein the second insulation film is formed of a nonphotosensitive insulative material, and the third insulation film is formed of a photosensitive insulative material.

3. The semiconductor device of claim 2, wherein the second insulation film is formed of the nonphotosensitive insulative material which includes silicon oxide as a main component.

4. The semiconductor device of claim 2, wherein the third insulation film is formed of the photosensitive insulative material which includes at least olefin resin.

5. The semiconductor device of claim 1, wherein the oxide semiconductor layer is formed of an oxide including at least one of indium (In), gallium (Ga) and zinc (Zn).

6. A semiconductor device comprising:

an insulative substrate;

an oxide semiconductor layer located above the insulative substrate and including a channel region, and a source region and a drain region which are located on both sides of the channel region;

a first terminal electrode located above the insulative substrate and formed of the same material as the oxide semiconductor layer;

a first insulation film covering the channel region and exposing the source region and the drain region;

a first conductive layer including a gate electrode located on the first insulation film;

a second insulation film covering the first conductive layer, the first terminal electrode, the source region and the drain region;

a second conductive layer including a source electrode which is put in contact with the source region, a drain electrode which is put in contact with the drain region, and a second terminal electrode which is opposed to the first terminal electrode via the second insulation film; and

a third insulation film interposed between the second insulation film, and the source electrode and the drain electrode.

7. The semiconductor device of claim 6, wherein the second insulation film is formed of a nonphotosensitive insulative material, and the third insulation film is formed of a photosensitive insulative material.

8. The semiconductor device of claim 7, wherein the second insulation film is formed of the nonphotosensitive insulative material which includes silicon oxide as a main component.

9. The semiconductor device of claim 7, wherein the third insulation film is formed of the photosensitive insulative material which includes at least olefin resin.

10. The semiconductor device of claim 6, wherein the oxide semiconductor layer is formed of an oxide including at least one of indium (In), gallium (Ga) and zinc (Zn).