SEMICONDUCTOR LIGHT-EMITTING DEVICES
First Claim
Patent Images
1. A semiconductor light-emitting device, comprising:
- a semiconductor region including a light-emitting structure; and
an electrode layer including,a first reflection metal layer contacting a first portion of the semiconductor region, the first reflection metal layer being configured to reflect light from the light-emitting structure, anda second reflection metal layer contacting a second portion of the semiconductor region, and the second reflection metal layer being configured to reflect light from the light-emitting structure,the second reflection metal layer being spaced apart from the first reflection metal layer and at least partially covering the first reflection metal layer.
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Abstract
Semiconductor light-emitting devices including a semiconductor region that includes a light-emitting structure; and an electrode layer including a first reflection metal layer that contacts a first portion of the semiconductor region and being configured to reflect light from the light-emitting structure and a second reflection metal layer that contacts a second portion of the semiconductor region and being configured to reflect light from the light-emitting structure, wherein the second reflection metal layer is spaced apart from the first reflection metal layer and at least partially covers the first reflection metal layer.
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Citations
20 Claims
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1. A semiconductor light-emitting device, comprising:
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a semiconductor region including a light-emitting structure; and an electrode layer including, a first reflection metal layer contacting a first portion of the semiconductor region, the first reflection metal layer being configured to reflect light from the light-emitting structure, and a second reflection metal layer contacting a second portion of the semiconductor region, and the second reflection metal layer being configured to reflect light from the light-emitting structure, the second reflection metal layer being spaced apart from the first reflection metal layer and at least partially covering the first reflection metal layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor light-emitting device comprising:
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a semiconductor region including a light-emitting structure having a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode layer contacting the first semiconductor layer; and a second electrode layer contacting the second semiconductor layer, at least one of the first electrode layer and the second electrode layer including a plurality of reflection metal layers, the plurality of reflection metal layers being spaced apart from one another and overlapping with one another, each of the plurality of reflection metal layers having a reflective surface contacting the semiconductor region. - View Dependent Claims (15, 16)
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17. A semiconductor light-emitting device, comprising:
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a semiconductor region including a light-emitting structure; and a first electrode structure including a first metal layer and a second metal layer spaced apart from each other, the first metal layer and the second metal layer contacting different areas of the semiconductor region, the second metal layer extends over the first metal layer, and the first metal layer and the second metal layer being configured to reflect light from the light-emitting structure. - View Dependent Claims (18, 19, 20)
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Specification