LED CHIP RESISTANT TO ELECTROSTATIC DISCHARGE AND LED PACKAGE INCLUDING THE SAME

• US 20140231852A1
• Filed: 02/14/2014
• Published: 08/21/2014
• Est. Priority Date: 02/15/2013
• Status: Abandoned Application

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Suh, Duk Il, Kim, Kyoung Wan, Yoon, Yeo Jin, Kim, Shin Hyoung, Woo, Sang Won
• Application Number:
  US14/181,094
• Publication Number:
  US 20140231852A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 29/861 Diodes
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

A light emitting diode chip and a light emitting diode package including the same. The light emitting diode chip includes a substrate, a light emitting diode section disposed on the substrate, an inverse parallel diode section disposed on the substrate and connected inversely parallel to the light emitting diode section. In the light emitting diode chip, the light emitting diode section is disposed together with the inverse parallel diode section.

Claims

1. A light emitting diode chip comprising:

a substrate;

a light emitting diode section disposed on the substrate; and

an inverse parallel diode section disposed on the substrate and connected inversely parallel to the light emitting diode section.

2. The light emitting diode chip of claim 1, further comprising a reflector covering at least a portion of the inverse parallel diode section.

3. The light emitting diode chip of claim 2, wherein the reflector comprises a distributed Bragg reflector.

4. The light emitting diode chip of claim 1, wherein the light emitting diode section and the inverse parallel diode section each comprise:

a first conductivity type nitride semiconductor layer;

a second conductivity type nitride semiconductor layer; and

an active layer disposed between the first conductivity type nitride semiconductor layer and the second conductivity type nitride semiconductor layer.

5. The light emitting diode chip of claim 4, further comprising:

a first electrode pad; and

a second electrode pad,

wherein the first electrode pad is disposed on the inverse parallel diode section, and the second electrode pad is disposed on the light emitting diode section.

6. The light emitting diode chip of claim 5, further comprising:

a first extension extending from the first electrode pad; and

a second extension extending from the second electrode pad,

wherein;

the first extension is electrically connected to the first conductivity type nitride semiconductor layer of the light emitting diode section; and

the second extension is electrically connected to the first conductivity type nitride semiconductor layer of the inverse parallel diode section.

7. The light emitting diode chip of claim 6, wherein a portion of the first electrode pad is disposed on the second extension.

8. The light emitting diode chip of claim 7, further comprising an insulation layer insulating the first electrode pad from the second extension.

9. The light emitting diode chip of claim 6, wherein the first extension is connected to the first conductivity type nitride semiconductor layer at a plurality of points on the light emitting diode section.

10. The light emitting diode chip of claim 9, wherein:

the first extension passes through an upper portion of the second conductivity type nitride semiconductor layer of the light emitting diode section; and

the first extension is electrically insulated from the second conductivity type nitride semiconductor layer by the insulation layer.

11. The light emitting diode chip of claim 6, further comprising a second transparent electrode layer disposed between the first electrode pad and the second conductivity type nitride semiconductor layer of the inverse parallel diode section.

12. The light emitting diode chip of claim 11, further comprising a first transparent electrode layer connected to an upper surface of the second conductivity type nitride semiconductor layer of the light emitting diode section,

wherein the second electrode pad is disposed on the first transparent electrode layer.

13. The light emitting diode chip of claim 12, further comprising a current blocking layer disposed under the first transparent electrode layer below the second electrode pad.

14. The light emitting diode chip of claim 11, further comprising a current blocking layer disposed under the first transparent electrode layer and below the second extension.

15. The light emitting diode chip of claim 14, wherein the current blocking layer comprises a distributed Bragg reflector.

16. The light emitting diode chip of claim 6, wherein the reflector covers at least a portion of the inverse parallel diode section.

17. The light emitting diode chip of claim 16, wherein at least a portion of the reflector extends to the light emitting diode section and is configured to insulate the second extension from a side surface of the light emitting diode section.

18. The light emitting diode chip of claim 16, wherein at least a portion of the reflector extends to the light emitting diode section and is configured to insulate the first extension from the light emitting diode section.

19. The light emitting diode chip of claim 16, wherein:

the reflector covers the inverse parallel diode section so as to enclose the first electrode pad; and

the reflector comprises an opening through which the first conductivity type nitride semiconductor layer connected to the second extension is exposed.

20. The light emitting diode chip of claim 6, wherein at least one of the first extension and the second extension comprises a reflective metal layer.

21. A light emitting diode chip comprising:

a substrate;

a light emitting diode section disposed on the substrate;

an inverse parallel diode section disposed on the substrate;

a first electrode pad disposed on the inverse parallel diode section;

a second electrode pad disposed on the light emitting diode section;

a first extension extending from the first electrode pad and connected to the light emitting diode section; and

a second extension extending from the second electrode pad and connected to the inverse parallel diode section,

wherein the inverse parallel diode section is connected inversely parallel to the light emitting diode section.

22. The light emitting diode chip of claim 21, further comprising a reflector disposed under at least a portion of the second extension.

23. A light emitting diode package comprising:

a chip mounting section having a chip mounting face; and

a light emitting diode chip mounted on the chip mounting face,

wherein the light emitting diode chip comprises;

a substrate;

a light emitting diode section disposed on the substrate; and

an inverse parallel diode section disposed on the substrate and connected inversely parallel to the light emitting diode section.

24. The light emitting diode package of claim 23, wherein the light emitting diode chip further comprises a reflector covering at least a portion of the inverse parallel diode section.