MICRO-ELECTRO-MECHANICAL DEVICE WITH BURIED CONDUCTIVE REGIONS, AND MANUFACTURING PROCESS THEREOF
First Claim
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1. A MEMS device comprising:
- a body;
a cavity above the body;
first and second anchoring regions;
a mobile structure above the cavity and coupled to the body by the first anchoring regions;
a fixed structure above the cavity and coupled to the body by the second anchoring regions;
first and second electrical-connection regions between the body and the first and second anchoring regions, respectively, the first electrical-connection region being electrically coupled to the mobile structure and the second electrical-connection region being electrically coupled to the fixed structure, wherein the first and second electrical-connection regions have a conductive multilayer that includes a first semiconductor material layer, a composite layer of a binary compound of a semiconductor material and of a transition metal, and a second semiconductor material layer.
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Abstract
A MEMS device formed by a body; a cavity, extending above the body; mobile and fixed structures extending above the cavity and physically connected to the body via anchoring regions; and electrical-connection regions, extending between the body and the anchoring regions and electrically connected to the mobile and fixed structures. The electrical-connection regions are formed by a conductive multilayer including a first semiconductor material layer, a composite layer of a binary compound of the semiconductor material and of a transition metal, and a second semiconductor material layer.
29 Citations
25 Claims
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1. A MEMS device comprising:
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a body; a cavity above the body; first and second anchoring regions; a mobile structure above the cavity and coupled to the body by the first anchoring regions; a fixed structure above the cavity and coupled to the body by the second anchoring regions; first and second electrical-connection regions between the body and the first and second anchoring regions, respectively, the first electrical-connection region being electrically coupled to the mobile structure and the second electrical-connection region being electrically coupled to the fixed structure, wherein the first and second electrical-connection regions have a conductive multilayer that includes a first semiconductor material layer, a composite layer of a binary compound of a semiconductor material and of a transition metal, and a second semiconductor material layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for manufacturing a MEMS device, the method comprising:
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over a body, forming an electrical-connection region that includes a first semiconductor material layer, a composite layer of a binary compound of a semiconductor material and of a transition metal, and a second semiconductor material layer on the composite layer; forming a sacrificial layer on the electrical-connection region; forming an anchoring opening in the sacrificial layer exposing at least a portion of the electrical-connection region; forming a structural layer on the sacrificial layer and in the anchoring opening; defining mobile and fixed structures in the structural layer; and at least partially removing the sacrificial layer and releasing portions of the mobile and fixed structures. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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20. An electronic device comprising:
a MEMS that includes; a substrate; a cavity above the substrate; first and second anchoring regions; a mobile structure above the cavity and coupled to the substrate by the first anchoring regions; a fixed structure coupled to the substrate by the second anchoring regions; a first electrical-connection region between the substrate and the first anchoring region and electrically coupled to the mobile structure; and a second electrical-connection region between the substrate and the second anchoring region and electrically coupled to the fixed structure, wherein the first and second electrical-connection regions have a conductive multilayer that includes a first semiconductor material layer, a composite layer of a binary compound of a semiconductor material and of a transition metal, and a second semiconductor material layer. - View Dependent Claims (21, 22, 23, 24, 25)
Specification