SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING DEVICE

• US 20140231995A1
• Filed: 01/31/2014
• Published: 08/21/2014
• Est. Priority Date: 02/21/2013
• Status: Abandoned Application

• Current Assignee: Ricoh Company Limited
• Original Assignee: Yuichi Ando
• Inventors: Sato, Yukito, Mae, Katsunori, ANDO, Yuichi
• Application Number:
  US14/169,213
• Publication Number:
  US 20140231995A1
• Time in Patent Office: Days
• US Class Current: 257/741
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81B 2201/0292 Sensors not provided for in B81B2201/0207 - B81B2201/0285
• CPC Class Codes: B81B 2201/047 Optical MEMS not provided for in B81B2201/042 - B81B2201/045
• CPC Class Codes: B81B 2207/095 through the lid
• CPC Class Codes: B81B 7/007 Interconnections between the MEMS and external electrical signals
• CPC Class Codes: B81C 1/00301 Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
• CPC Class Codes: B81C 2203/031 Anodic bondings
• CPC Class Codes: B81C 2203/0707 Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/09 of a plurality of bonding areas
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/1461 MEMS
• CPC Class Codes: H01L 2924/15788 Glasses, e.g. amorphous oxides, nitrides or fluorides

Abstract

A device including a first substrate in which a functional element and an electrode are formed; a second substrate in which a through electrode is formed; a joining material that joins the first substrate and the second substrate while reserving a predetermined space between the functional element and the second substrate; and a conductive material that electrically connects the electrode to the through electrode. Here, the joining material is harder than the conductive material, and the joining material is electrically less conductive than the conductive material.

Claims

1. A semiconductor device comprising:

a first substrate in which a functional element and an electrode are formed;

a second substrate in which a through electrode is formed;

a joining material that joins the first substrate and the second substrate, while reserving a predetermined space between the functional element and the second substrate; and

a conductive material that electrically connects the electrode to the through electrode,

wherein the joining material is harder than the conductive material, and the joining material is electrically less conductive than the conductive material.

2. The semiconductor device according to claim 1,

wherein the joining material and the conductive material are formed of corresponding baked materials having the same melting temperature.

3. The semiconductor device according to claim 1,

wherein the joining material is a glass frit material or a polymer resin.

4. The semiconductor device according to claim 1,

wherein the conductive material is Au, Ag, a paste material including Au and Ag, or a solder material including Au and Ag.

5. The semiconductor device according to claim 1,

wherein the functional element is vacuum sealed by the joining material.

6. The semiconductor device according to claim 1,

wherein each of the first substrate and the second substrate is a flat substrate.

7. The semiconductor device according to claim 1, further comprising:

a third substrate,

wherein an optical element is formed on the third substrate.

8. The semiconductor device according to claim 7,

wherein the joining material that joins the first substrate and the second substrate is a first joining material, and a joining material that joins the first substrate and the third substrate is a second joining material, and

wherein a thickness and a width of the second joining material are different from those of the first joining material.

9. The semiconductor device according to claim 8,

wherein the first joining material and the second joining material are formed of an identical material.

10. The semiconductor device according to claim 8,

wherein the first joining material is a glass frit material, and the second joining material is a metal.

11. The semiconductor device according to claim 8,

wherein the second joining material is a polymer resin.

12. A method of manufacturing a device, the method comprising:

a step of forming a functional element and an electrode on a first substrate;

a step of forming a conductive material on the electrode;

a step of forming a through electrode in a second substrate;

a step of forming a joining material on the second substrate, wherein the joining material is harder than the conductive material, and the joining material is electrically less conductive than the conductive material;

a step of joining the first substrate and the second substrate through the joining material, while reserving a predetermined space between the functional element and the second substrate; and

a step of electrically connecting the electrode to the through electrode through the conductive material.

14. The method according to claim 12,

wherein the joining material that joins the first substrate and the second substrate is a first joining material, and a joining material that joins the first substrate and a third substrate including an optical element is a second joining material, and

wherein the method further includes a step of forming the second joining material, so that a thickness and a width of the second joining material are different from those of the first joining material.

13. A method of manufacturing a device, the method comprising:

a step of forming a functional element and an electrode on a first substrate;

a step of forming a conductive material on the electrode;

a step of forming a through electrode in a second substrate;

a step of forming a joining material on the second substrate, wherein the joining material is harder than the conductive material, and the joining material is electrically less conductive than the conductive material,

a step of baking the conductive material and the joining material, while reserving a predetermined space between the functional element and the second substrate;

a step of joining the first substrate and the second substrate through the joining material; and

a step of electrically connecting the electrode and the through electrode through the conductive material.