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DOUBLE GATE ION SENSITIVE FIELD EFFECT TRANSISTOR

  • US 20140234981A1
  • Filed: 09/28/2012
  • Published: 08/21/2014
  • Est. Priority Date: 09/30/2011
  • Status: Active Grant
First Claim
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1. A device comprising:

  • a substrate;

    a source region and a drain region formed within the substrate and having a channel region provided therebetween;

    a first insulating layer formed over the channel region;

    a first floating gate formed over the first insulating layer, the first floating gate configured to respond to an analyte in a target material;

    a second gate formed over the first floating gate, the second gate capacatively coupled but not electrically connected to the first floating gate.

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