SURFACE TREATMENT OF A SEMICONDUCTOR LIGHT EMITTING DEVICE
First Claim
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1. A method comprising:
- roughening a surface of a semiconductor structure, the semiconductor structure comprising a light emitting layer and the surface comprising a surface from which light is extracted from the semiconductor structure; and
after roughening, treating the surface so that;
total internal reflection within the semiconductor structure is increasedor absorption at the surface is increased.
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Abstract
A method according to embodiments of the invention includes roughening (FIG. 6) a surface (58) of a semiconductor structure (46-48, FIG. 5). The semiconductor structure includes a light emitting layer (47). The surface (58) is a surface from which light is extracted from the semiconductor structure. After roughening, the roughened surface is treated (FIG. 7) to increase total internal reflection, or absorption at the surface, or to reduce an amount of light extracted from the semiconductor structure through the surface (58).
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Citations
18 Claims
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1. A method comprising:
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roughening a surface of a semiconductor structure, the semiconductor structure comprising a light emitting layer and the surface comprising a surface from which light is extracted from the semiconductor structure; and after roughening, treating the surface so that; total internal reflection within the semiconductor structure is increased or absorption at the surface is increased. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method comprising:
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roughening a surface of a semiconductor structure, the semiconductor structure comprising a light emitting layer and the surface comprising a surface from which light is extracted from the semiconductor structure; and after roughening, treating the surface to reduce an amount of light extracted from the semiconductor structure through the surface. - View Dependent Claims (9, 10, 11, 12)
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13. A method comprising:
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growing a semiconductor structure on a growth substrate, the semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region; removing the growth substrate; roughening a surface of a semiconductor structure, the surface comprising a surface from which light is extracted from the semiconductor structure; and treating the roughened surface with plasma, wherein said treating reduces an amount of light extracted from the semiconductor structure through the roughened surface. - View Dependent Claims (14, 15)
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16. (canceled)
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17. (canceled)
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18. (canceled)
Specification