VANADIUM DIOXIDE MICROACTUATORS

• US 20140238013A1
• Filed: 10/30/2013
• Published: 08/28/2014
• Est. Priority Date: 11/09/2012
• Status: Abandoned Application

• Current Assignee: Regents of the University of California (University of California)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Wu, Junqiao, Liu, Kai, Wang, Kevin
• Application Number:
  US14/067,555
• Publication Number:
  US 20140238013A1
• Time in Patent Office: Days
• US Class Current: 60/528
• CPC Class Codes: F03G 7/06 using expansion or contraction of bodies due to heating, cooling, moistening, drying or the like using thermal expansion of non-vaporising liquids F01K

Abstract

This disclosure provides systems, methods, and apparatus related to vanadium dioxide microactuators. In one aspect, a method includes depositing a vanadium dioxide layer on a sacrificial layer disposed on a substrate. A metal layer is deposited on the vanadium dioxide layer. The metal layer is patterned. Portions of the vanadium dioxide layer that are not covered by the metal layer are removed. At least a portion of the sacrificial layer is removed to form a cantilever-type structure including the vanadium dioxide layer and the metal layer disposed on the vanadium dioxide layer.

Claims

1. A method comprising:

(a) depositing a vanadium dioxide layer on a sacrificial layer disposed on a substrate;

(b) depositing a metal layer on the vanadium dioxide layer;

(c) patterning the metal layer;

(d) removing portions of the vanadium dioxide layer that are not covered by the metal layer; and

(e) removing at least a portion of the sacrificial layer to form a cantilever-type structure including the vanadium dioxide layer and the metal layer disposed on the vanadium dioxide layer.

2. The method of claim 1, further comprising:

after operation (c), thermally annealing the metal layer at about 150°

C. to 500°

C. for about 60 seconds to 180 seconds.

3. The method of claim 1, further comprising:

before operation (d), depositing a photoresist on a portion of the metal layer and the vanadium dioxide layer;

in operation (d), removing portions of the vanadium dioxide layer that are not covered by the metal layer and the photoresist; and

after operation (e), removing the photoresist.

4. The method of claim 1, further comprising:

(f) attaching a polymer layer to the structure.

5. The method of claim 1, wherein the sacrificial layer disposed on the substrate is disposed on an entire side of the substrate, and wherein the vanadium dioxide layer is deposited on the sacrificial layer to completely cover the sacrificial layer in operation (a).

6. The method of claim 1, wherein the sacrificial layer comprises silicon dioxide.

7. The method of claim 1, wherein the vanadium dioxide layer is about 50 nanometers to 1 micron thick.

8. The method of claim 1, wherein a metal of the metal layer is selected from a group consisting of chromium, nickel, and titanium.

9. The method of claim 1, wherein the metal layer is about 15 nanometer to 500 nanometers thick.

10. The method of claim 1, wherein the vanadium dioxide layer is deposited using a pulsed laser deposition process.

11. The method of claim 1, wherein the metal layer is deposited using a physical vapor deposition process.

12. The method of claim 1, wherein the sacrificial layer is about 0.1 microns to 20 microns thick.

14. The device of claim 12, wherein the U-shaped pattern is about 10 microns to 500 microns long, wherein the U-shaped pattern is about 5 microns to 100 microns wide.

13. A device comprising:

a vanadium dioxide layer;

a metal layer disposed on the vanadium dioxide layer, the vanadium dioxide layer and the metal layer forming a pattern including a first electrode, a second electrode, and a line, a first end of the line connected to the first electrode and the second end of the line connected to the second electrode, the line forming a U-shaped pattern;

a substrate; and

an sacrificial layer disposed on a portion of the substrate, the vanadium dioxide layer of the first electrode, the second electrode, a first portion of the line forming the U-shaped pattern being disposed on the sacrificial layer, and a second portion of the line forming the U-shaped pattern being in free space.

15. The device of claim 13, wherein the line forming the U-shaped pattern is about 2 microns to 20 microns wide.

16. The device of claim 13, wherein the device is configured to:

receive electrical power though the first electrode and the second electrode, wherein the electrical power heats the vanadium dioxide layer and the metal layer and causes actuation of the second portion of the line forming the U-shaped pattern.

17. The device of claim 13, wherein the vanadium dioxide layer is about 50 nanometers to 1 micron thick.

18. The device of claim 13, wherein the metal of the metal layer is selected from a group consisting of chromium, nickel, and titanium.

19. The device of claim 13, wherein the metal layer is about 15 nanometers to 500 nanometers thick.

20. The device of claim 13, wherein the sacrificial layer is about 0.1 microns to 20 microns thick, and wherein the sacrificial layer comprises silicon oxide.