LIGHT EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND OPTICAL TRANSCEIVER
First Claim
1. A light emitting device, comprising:
- an active layer formed on a semiconductor substrate for emitting light;
a semiconductor layer of a first conductivity type electrically connected to one end of the active layer;
a semiconductor layer of a second conductivity type electrically connected to the other end of the active layer;
first and second electrodes;
a feedback mechanism for laser oscillation; and
a waveguide for guiding the light emitted from the active layer,wherein the active layer is made of a semiconductor having an affinity with a silicon CMOS process, andthe semiconductor layer of the first conductivity type and the semiconductor layer of the conductivity type, and the waveguide are each made of silicon as a part of the semiconductor substrate.
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Accused Products
Abstract
The light emitting device includes an active layer formed on a semiconductor substrate for emitting light, a semiconductor layer of a first conductivity type electrically connected to one end of the active layer, a semiconductor layer of a second conductivity type electrically connected to the other end of the active layer, first and second electrodes, a feedback mechanism for laser oscillation, and a waveguide for guiding the light emitted from the active layer, in which the active layer is made of a semiconductor having an affinity with a silicon CMOS process, and the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, and the waveguide are each made of silicon as a part of the semiconductor substrate.
20 Citations
14 Claims
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1. A light emitting device, comprising:
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an active layer formed on a semiconductor substrate for emitting light; a semiconductor layer of a first conductivity type electrically connected to one end of the active layer; a semiconductor layer of a second conductivity type electrically connected to the other end of the active layer; first and second electrodes; a feedback mechanism for laser oscillation; and a waveguide for guiding the light emitted from the active layer, wherein the active layer is made of a semiconductor having an affinity with a silicon CMOS process, and the semiconductor layer of the first conductivity type and the semiconductor layer of the conductivity type, and the waveguide are each made of silicon as a part of the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of manufacturing a light emitting device, comprising the steps of:
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(a) preparing an SOT substrate composed of a supporting substrate, an insulating film, and silicon; (b) processing the silicon into a predetermined shape, thereby forming a waveguide; (c) forming a semiconductor layer of a first conductivity type and a semiconductor layer of a second conductivity type on the silicon; (d) forming an insulating film in a predetermined area on the silicon; and (e) selectively growing either germanium or silicon/germanium in an area, which is on the silicon, where no insulating film is formed below the area by utilizing a chemical vapor deposition method, thereby forming an active layer. - View Dependent Claims (10, 11, 12)
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13. An optical transceiver, comprising:
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a semiconductor substrate in which a light emitting device and a photodiode are integrated, the light emitting device including; an active layer formed on a semiconductor substrate for emitting light; a semiconductor layer of a first conductivity type electrically connected to one end of the active layer; a semiconductor layer of a second conductivity type electrically connected to the other end of the active layer; first and second electrodes; a feedback mechanism for laser oscillation; and a waveguide for guiding the light emitted from the active layer, wherein the active layer is made of a semiconductor having an affinity with a silicon CMOS process, and the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, and the waveguide are each made of silicon as a part of the semiconductor substrate. - View Dependent Claims (14)
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Specification