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LIGHT EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND OPTICAL TRANSCEIVER

  • US 20140241734A1
  • Filed: 11/24/2013
  • Published: 08/28/2014
  • Est. Priority Date: 02/25/2013
  • Status: Active Grant
First Claim
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1. A light emitting device, comprising:

  • an active layer formed on a semiconductor substrate for emitting light;

    a semiconductor layer of a first conductivity type electrically connected to one end of the active layer;

    a semiconductor layer of a second conductivity type electrically connected to the other end of the active layer;

    first and second electrodes;

    a feedback mechanism for laser oscillation; and

    a waveguide for guiding the light emitted from the active layer,wherein the active layer is made of a semiconductor having an affinity with a silicon CMOS process, andthe semiconductor layer of the first conductivity type and the semiconductor layer of the conductivity type, and the waveguide are each made of silicon as a part of the semiconductor substrate.

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