MANUFACTURING METHOD FOR AN LED
First Claim
1. A manufacturing method for an LED (light emitting diode), comprising:
- providing a substrate having a buffer layer and a first N-type epitaxial layer sequentially disposed on a top face of the substrate;
forming a blocking layer on the first N-type epitaxial layer;
etching the blocking layer to form patterned grooves, wherein the patterned grooves penetrate the blocking layer to the first N-type epitaxial layer;
forming a second N-type epitaxial layer on the blocking layer, the second N-type epitaxial layer contacting the first N-type epitaxial layer via a portion of the second N-type epitaxial layer in the patterned grooves;
forming a light emitting layer, a P-type epitaxial layer and a conductive layer sequentially disposed on the second N-type epitaxial layer; and
forming an N-type electrode to electrically connect with the first N-type epitaxial layer, and a P-type electrode on the conductive layer, the N-type electrode disposed on the blocking layer opposite to the P-type electrode, wherein the N-type electrode is separated from the second N-type epitaxial layer and has a portion extending into the patterned grooves to contact the first N-type epitaxial layer.
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Accused Products
Abstract
A manufacturing method for an LED includes providing a substrate having a buffer layer and a first N-type epitaxial layer, forming a blocking layer on the first N-type epitaxial layer, and etching the blocking layer to form patterned grooves penetrating the blocking layer to the first N-type epitaxial layer. A second N-type epitaxial layer is then formed on the blocking layer to contact the first N-type epitaxial layer; a light emitting layer, a P-type epitaxial layer and a conductive layer are thereafter disposed on the second N-type epitaxial layer; an N-type electrode is formed to electrically connect with the first N-type epitaxial layer, and a P-type electrode is formed on the conductive layer. The N-type electrode is disposed on the blocking layer and separated from the second
N-type epitaxial layer and has a portion extending into the patterned grooves to contact the first N-type epitaxial layer.
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Citations
10 Claims
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1. A manufacturing method for an LED (light emitting diode), comprising:
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providing a substrate having a buffer layer and a first N-type epitaxial layer sequentially disposed on a top face of the substrate; forming a blocking layer on the first N-type epitaxial layer; etching the blocking layer to form patterned grooves, wherein the patterned grooves penetrate the blocking layer to the first N-type epitaxial layer; forming a second N-type epitaxial layer on the blocking layer, the second N-type epitaxial layer contacting the first N-type epitaxial layer via a portion of the second N-type epitaxial layer in the patterned grooves; forming a light emitting layer, a P-type epitaxial layer and a conductive layer sequentially disposed on the second N-type epitaxial layer; and forming an N-type electrode to electrically connect with the first N-type epitaxial layer, and a P-type electrode on the conductive layer, the N-type electrode disposed on the blocking layer opposite to the P-type electrode, wherein the N-type electrode is separated from the second N-type epitaxial layer and has a portion extending into the patterned grooves to contact the first N-type epitaxial layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A manufacturing method for an LED, comprising:
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providing a substrate having a buffer layer and a first N-type epitaxial layer sequentially disposed on a top face of the substrate; forming a blocking layer on the first N-type epitaxial layer; etching the blocking layer to form patterned grooves, wherein the patterned grooves penetrate the blocking layer to the first N-type epitaxial layer; forming a second N-type epitaxial layer on the blocking layer, the second N-type epitaxial layer contacting the first N-type epitaxial layer via a portion of the second N-type epitaxial layer in the patterned grooves; forming a light emitting layer, a P-type epitaxial layer and a conductive layer sequentially disposed on the second N-type epitaxial layer; and forming an N-type electrode to electrically connect with the first N-type epitaxial layer, and a P-type electrode on the conductive layer, wherein the N-type electrode is disposed inside the patterned grooves of the blocking layer to contact the first N-type epitaxial layer.
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Specification