METHOD OF SEVERING A SEMICONDUCTOR DEVICE COMPOSITE
First Claim
1. A method of severing a semiconductor device composite which comprises a carrier having a main surface and a semiconductor layer sequence arranged on the main surface comprising:
- forming a separating trench in the semiconductor device composite by a first laser cut such that the separating trench only partially severs the semiconductor device composite in a vertical direction running perpendicular to the main surface; and
severing the semiconductor device composite completely along the separating trench with a severing cut with a laser.
2 Assignments
0 Petitions
Accused Products
Abstract
A method of severing a semiconductor device composite includes a carrier having a main surface and a semiconductor layer sequence arranged on the main surface including forming a separating trench in the semiconductor device composite by a first laser cut such that the separating trench only partially severs the semiconductor device composite in a vertical direction running perpendicular to the main surface, and severing the semiconductor device composite completely along the separating trench with a severing cut with a laser.
-
Citations
15 Claims
-
1. A method of severing a semiconductor device composite which comprises a carrier having a main surface and a semiconductor layer sequence arranged on the main surface comprising:
-
forming a separating trench in the semiconductor device composite by a first laser cut such that the separating trench only partially severs the semiconductor device composite in a vertical direction running perpendicular to the main surface; and severing the semiconductor device composite completely along the separating trench with a severing cut with a laser. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
-
-
15. A method of severing a semiconductor device composite which comprises a carrier having a main surface and a semiconductor layer sequence arranged on the main surface, wherein
the carrier comprises a semiconductor material or a ceramics material; -
a metal layer is arranged on a side of the carrier remote from the semiconductor layer sequence; the semiconductor layer sequence is fixed to the carrier by a bonding layer; a separating trench is formed in the semiconductor device composite by a first laser cut, the separating trench only partially severing the semiconductor device composite in a vertical direction running perpendicular to the main surface; the semiconductor device composite is severed completely along the separating trench with a severing cut with a laser; and a second laser cut is made along the separating trench between the first laser cut and the severing cut, the second laser cut only removing material of the carrier.
-
Specification