×

METHODS OF FORMING ASYMMETRIC SPACERS ON VARIOUS STRUCTURES ON INTEGRATED CIRCUIT PRODUCTS

  • US 20140248778A1
  • Filed: 03/01/2013
  • Published: 09/04/2014
  • Est. Priority Date: 03/01/2013
  • Status: Active Grant
First Claim
Patent Images

1. A method, comprising:

  • forming a structure above a semiconductor substrate;

    performing a conformal deposition process to form a layer of undoped spacer material above said structure;

    performing an angled ion implant process to form a region of doped spacer material in said layer of undoped spacer material while leaving other portions of said layer of undoped spacer material undoped; and

    after performing said angled ion implant process, performing at least one etching process that removes said undoped portions of said layer of undoped spacer material and thereby results in a sidewall spacer comprised of said doped spacer material positioned adjacent at least one side, but not all sides, of said structure.

View all claims
  • 5 Assignments
Timeline View
Assignment View
    ×
    ×