METHODS OF FORMING ASYMMETRIC SPACERS ON VARIOUS STRUCTURES ON INTEGRATED CIRCUIT PRODUCTS
First Claim
1. A method, comprising:
- forming a structure above a semiconductor substrate;
performing a conformal deposition process to form a layer of undoped spacer material above said structure;
performing an angled ion implant process to form a region of doped spacer material in said layer of undoped spacer material while leaving other portions of said layer of undoped spacer material undoped; and
after performing said angled ion implant process, performing at least one etching process that removes said undoped portions of said layer of undoped spacer material and thereby results in a sidewall spacer comprised of said doped spacer material positioned adjacent at least one side, but not all sides, of said structure.
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Accused Products
Abstract
One illustrative method disclosed herein includes forming a structure above a semiconductor substrate, performing a conformal deposition process to form a layer of undoped spacer material above the structure, performing an angled ion implant process to form a region of doped spacer material in the layer of undoped spacer material while leaving other portions of the layer of undoped spacer material undoped, and, after performing the angled ion implant process, performing at least one etching process that removes the undoped portions of the layer of undoped spacer material and thereby results in a sidewall spacer comprised of the doped spacer material positioned adjacent at least one side, but not all sides, of the structure.
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Citations
23 Claims
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1. A method, comprising:
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forming a structure above a semiconductor substrate; performing a conformal deposition process to form a layer of undoped spacer material above said structure; performing an angled ion implant process to form a region of doped spacer material in said layer of undoped spacer material while leaving other portions of said layer of undoped spacer material undoped; and after performing said angled ion implant process, performing at least one etching process that removes said undoped portions of said layer of undoped spacer material and thereby results in a sidewall spacer comprised of said doped spacer material positioned adjacent at least one side, but not all sides, of said structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method, comprising:
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forming a structure above a semiconductor substrate; performing a conformal deposition process to form a layer of undoped spacer material above said structure; performing an angled ion implant process with dopant material comprised of one of boron difluoride, boron or carbon to form a region of doped spacer material comprising said dopant material in said layer of undoped spacer material while leaving other portions of said layer of undoped spacer material undoped; after performing said angled ion implant process, performing a first etching process that selectively removes said undoped portions of said layer of undoped spacer material while leaving said region of doped spacer material in position; and performing a second anisotropic etching process to remove portions of said region of doped spacer material that are oriented in a direction that is substantially parallel to an upper surface of said substrate so as to thereby define a sidewall spacer comprised of said doped spacer material positioned adjacent at least one side, but not all sides, of said structure. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A method, comprising:
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forming a structure above a semiconductor substrate; performing a conformal deposition process to form a layer of undoped spacer material above said structure, wherein said layer of undoped spacer material is comprised of undoped amorphous silicon; performing an angled ion implant process with dopant material comprised of one of boron difluoride, boron or carbon to form a region of doped spacer material comprising said dopant material in said layer of undoped spacer material while leaving other portions of said layer of undoped spacer material undoped, wherein said angled ion implant process is performed at an angle that falls within the range of about 5-45 degrees relative to a line normal to an upper surface of said substrate and using a dopant dose that ranges from about 1e14-1e15 ions/cm2; after performing said angled ion implant process, performing a first etching process that selectively removes said undoped portions of said layer of undoped spacer material while leaving said region of doped spacer material in position; and performing a second anisotropic etching process to remove portions of said region of doped spacer material that are oriented in a direction that is substantially parallel to an upper surface of said substrate so as to thereby define a sidewall spacer comprised of said doped spacer material positioned adjacent at least one side, but not all sides, of said structure. - View Dependent Claims (21, 22, 23)
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Specification