THIN-FILM TRANSISTOR ACTIVE DEVICE AND METHOD FOR MANUFACTURING SAME
First Claim
1. A thin-film transistor active device, comprising a substrate and a plurality of thin-film transistors formed on the substrate, each of thin-film transistors comprising a gate insulation layer and an oxide semiconductor active layer, the gate insulation layer comprising a silicon oxide layer having refractivity between 1.43-1.47.
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Accused Products
Abstract
The present invention provides a thin-film transistor active device and a method for manufacturing the device. The thin-film transistor active device includes a substrate and a plurality of thin-film transistors formed on the substrate. Each of thin-film transistors includes a gate insulation layer and an oxide semiconductor active layer. The gate insulation layer is a silicon oxide layer having refractivity between 1.43-1.47. During the formation of the gate insulation layer, the flowrate ration between nitrous oxide and silicon tetrahydride in chemical vapor deposition is controlled to be greater than 30% so as to control the refractivity of the gate insulation layer so formed of silicon oxide to be between 1.43-1.47; meanwhile, the content of N—H bond in the gate insulation layer is reduced so as to effectively prevent the high interface trap density between the gate insulation layer and the oxide semiconductor layer caused by high content of N—H bond.
26 Citations
13 Claims
- 1. A thin-film transistor active device, comprising a substrate and a plurality of thin-film transistors formed on the substrate, each of thin-film transistors comprising a gate insulation layer and an oxide semiconductor active layer, the gate insulation layer comprising a silicon oxide layer having refractivity between 1.43-1.47.
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8. A thin-film transistor active device, comprising a substrate and a plurality of thin-film transistors formed on the substrate, each of thin-film transistors comprising a gate insulation layer and an oxide semiconductor active layer, the gate insulation layer comprising a silicon oxide layer having a refractivity between 1.43-1.47;
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wherein the thin-film transistor comprises a gate terminal, the gate insulation layer being formed on the gate terminal through chemical vapor deposition; wherein in the chemical vapor deposition of the gate insulation layer, flowrate ratio between nitrous oxide and silicon tetrahydride is greater than 30%; wherein the oxide semiconductor active layer comprises at least one of zinc oxide, tin oxide, indium oxide, and gallium oxide and is formed on the gate insulation layer through sputtering; wherein the thin-film transistor also comprises a first protection layer formed on the oxide semiconductor active layer and the first protection layer is formed through chemical vapor deposition on the oxide semiconductor active layer; wherein the thin-film transistor also comprises a source terminal and a drain terminal formed on the first protection layer, the source terminal and the drain terminal being formed by sputtering metal on the first protection layer to form a metal layer, which is then subjected to a masking operation, the metal layer comprising one of a molybdenum layer, an aluminum layer, a titanium layer, and a copper layer or a lamination thereof; and wherein the thin-film transistor also comprises a second protection layer formed on the source terminal and the drain terminal, the second protection layer being formed through chemical vapor deposition on the source terminal and the drain terminal.
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9. A method for manufacturing thin-film transistor active device, comprising the following steps:
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(1) providing a substrate; (2) forming a gate terminal on the substrate through sputtering and a masking operation; (3) forming a gate insulation layer on the gate terminal through chemical vapor deposition, wherein the chemical vapor deposition is carried out with a flowrate ration between nitrous oxide and silicon tetrahydride greater than 30% and the refractivity of the gate insulation layer so formed is between 1.43-1.47; (4) forming an oxide semiconductor layer on the gate insulation layer through sputtering and a masking operation; (5) forming a first protection layer on the oxide semiconductor active layer through chemical vapor deposition and a masking operation; (6) forming a metal layer on the first protection layer through a sputtering operation and applying a masking operation to form a source terminal and a drain terminal; (7) forming a second protection layer on the metal layer and forming a bridging hole in the second protection layer; and (8) forming a transparent conductive layer on the second protection layer through sputtering deposition and a masking operation so as to form a thin-film transistor active device. - View Dependent Claims (10, 11, 12, 13)
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Specification