SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A method for manufacturing a semiconductor light emitting device comprising:
- applying a resin liquid onto a first major surface of a workpiece,the workpiece having the first major surface and including a plurality of element units aligned in a plane parallel to the first major surface and a resin layer holding the plurality of element units,each of the plurality of element units including;
a conductive first columnar unit extending in a first direction perpendicular to the first major surface;
a conductive second columnar unit provided apart from the first columnar unit in a second direction parallel to the first major surface and extending in the first direction; and
a light emitting unit including;
a first semiconductor layer of a first conductivity type including a first semiconductor portion opposed to at least part of the first columnar unit and a second semiconductor portion opposed to at least part of the second columnar unit;
a second semiconductor layer of a second conductivity type provided between the second columnar unit and the second semiconductor portion; and
a light emitting layer provided between the second semiconductor portion and the second semiconductor layer,the resin liquid including a light transmissive resin and a plurality of particles dispersed in the light transmissive resin and configured to absorb at least part of a first light emitted from the light emitting layer and emit a second light of a wavelength different from a wavelength of the first light;
causing the plurality of particles in the resin liquid to sink while keeping a state where a temperature of the workpiece on which the resin liquid is applied is raised to a first temperature and forming a first region on a surface side of the resin liquid and a second region provided between the first region and the workpiece and including the particle in a concentration higher than a concentration of the particle in the first region;
raising a temperature of the workpiece on which the first region and the second region are formed to a second temperature higher than the first temperature to cure the resin liquid to form an optical layer including a first portion and a second portion, the first portion being formed from the first region, the second portion being formed from the second region and including the particle at a concentration higher than a concentration of the particle in the first portion, there being no seam between the first portion and the second portion; and
dividing the optical layer and the resin layer for the plurality of element units.
1 Assignment
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Accused Products
Abstract
According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include applying a resin liquid onto a first major surface of a workpiece. The workpiece has the first major surface and includes a plurality of element units and a resin layer holding the plurality of element units. The method causes the particles in the resin liquid to sink and forms a first region on a surface side of the resin liquid and a second region provided between the first region and the workpiece. The method raises a temperature of the workpiece to a second temperature higher than the first temperature to cure the resin liquid to form an optical layer including a first portion and a second portion. In addition, the method divides the optical layer and the resin layer for the plurality of element units.
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Citations
20 Claims
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1. A method for manufacturing a semiconductor light emitting device comprising:
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applying a resin liquid onto a first major surface of a workpiece, the workpiece having the first major surface and including a plurality of element units aligned in a plane parallel to the first major surface and a resin layer holding the plurality of element units, each of the plurality of element units including; a conductive first columnar unit extending in a first direction perpendicular to the first major surface; a conductive second columnar unit provided apart from the first columnar unit in a second direction parallel to the first major surface and extending in the first direction; and a light emitting unit including; a first semiconductor layer of a first conductivity type including a first semiconductor portion opposed to at least part of the first columnar unit and a second semiconductor portion opposed to at least part of the second columnar unit; a second semiconductor layer of a second conductivity type provided between the second columnar unit and the second semiconductor portion; and a light emitting layer provided between the second semiconductor portion and the second semiconductor layer, the resin liquid including a light transmissive resin and a plurality of particles dispersed in the light transmissive resin and configured to absorb at least part of a first light emitted from the light emitting layer and emit a second light of a wavelength different from a wavelength of the first light; causing the plurality of particles in the resin liquid to sink while keeping a state where a temperature of the workpiece on which the resin liquid is applied is raised to a first temperature and forming a first region on a surface side of the resin liquid and a second region provided between the first region and the workpiece and including the particle in a concentration higher than a concentration of the particle in the first region; raising a temperature of the workpiece on which the first region and the second region are formed to a second temperature higher than the first temperature to cure the resin liquid to form an optical layer including a first portion and a second portion, the first portion being formed from the first region, the second portion being formed from the second region and including the particle at a concentration higher than a concentration of the particle in the first portion, there being no seam between the first portion and the second portion; and dividing the optical layer and the resin layer for the plurality of element units. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a semiconductor light emitting device comprising:
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disposing a structure body on a first major surface of a workpiece, the structure body lying along an edge of the first major surface, the workpiece having the first major surface and including a plurality of element units aligned in a plane parallel to the first major surface and a resin layer holding the plurality of element units, each of the plurality of element units including; a conductive first columnar unit extending in a first direction perpendicular to the first major surface; a conductive second columnar unit provided apart from the first columnar unit in a second direction parallel to the first major surface and extending in the first direction; and a light emitting unit including; a first semiconductor layer of a first conductivity type including a first semiconductor portion opposed to at least part of the first columnar unit and a second semiconductor portion opposed to at least part of the second columnar unit; a second semiconductor layer of a second conductivity type provided between the second columnar unit and the second semiconductor portion; and a light emitting layer provided between the second semiconductor portion and the second semiconductor layer; applying a resin liquid onto a region surrounded by the structure body of the first major surface, the resin liquid including a light transmissive resin and a plurality of particles dispersed in the light transmissive resin and configured to absorb at least part of a first light emitted from the light emitting layer and emit a second light of a wavelength different from a wavelength of the first light; applying centrifugal force to the workpiece on which the resin liquid is applied and changing a distribution of the plurality of particles in the resin liquid to form a first region on a surface side of the resin liquid and a second region provided between the first region and the workpiece and including the particle at a concentration higher than a concentration of the particle in the first region; curing the resin liquid to form an optical layer including a first portion and a second portion, the first portion being formed from the first region, the second portion being formed from the second region and including the particle at a concentration higher than a concentration of the particle in the first portion, there being no seam between the first portion and the second portion; and dividing the optical layer and the resin layer for the plurality of element units, wherein a thickness of the second portion is 200 micrometers or less. - View Dependent Claims (10, 11, 12, 14)
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9. (canceled)
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13. A method for manufacturing a semiconductor light emitting device comprising:
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disposing a structure body on a first major surface of a workpiece, the structure body lying along an edge of the first major surface, the workpiece having the first major surface and including a plurality of element units aligned in a plane parallel to the first major surface and a resin layer holding the plurality of element units, each of the plurality of element units including; a conductive first columnar unit extending in a first direction perpendicular to the first major surface; a conductive second columnar unit provided apart from the first columnar unit in a second direction parallel to the first major surface and extending in the first direction; and a light emitting unit including; a first semiconductor layer of a first conductivity type including a first semiconductor portion opposed to at least part of the first columnar unit and a second semiconductor portion opposed to at least part of the second columnar unit; a second semiconductor layer of a second conductivity type provided between the second columnar unit and the second semiconductor portion; and a light emitting layer provided between the second semiconductor portion and the second semiconductor layer; applying a resin liquid onto a region surrounded by the structure body of the first major surface, the resin liquid including a light transmissive resin and a plurality of particles dispersed in the light transmissive resin and configured to absorb at least part of a first light emitted from the light emitting layer and emit a second light of a wavelength different from a wavelength of the first light; applying centrifugal force to the workpiece on which the resin liquid is applied and changing a distribution of the plurality of particles in the resin liquid to form a first region on a surface side of the resin liquid and a second region provided between the first region and the workpiece and including the particle at a concentration higher than a concentration of the particle in the first region; curing the resin liquid to form an optical layer including a first portion and a second portion, the first portion being formed from the first region, the second portion being formed from the second region and including the particle at a concentration higher than a concentration of the particle in the first portion, there being no seam between the first portion and the second portion; and dividing the optical layer and the resin layer for the plurality of element units, wherein a thickness of the first portion is not less than 20 micrometers and not more than 100 micrometers and the thickness of the second portion is 40 micrometers or more.
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15. A semiconductor light emitting device comprising:
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a conductive first columnar unit extending in a first direction; a conductive second columnar unit provided apart from the first columnar unit in a second direction crossing the first direction and extending in the first direction; an optical layer provided apart from the first columnar unit and the second columnar unit in the first direction; a light emitting unit including; a first semiconductor layer of a first conductivity type including; a first semiconductor portion provided between at least part of the first columnar unit and the optical layer; and a second semiconductor portion provided between the second columnar unit and the optical layer; a second semiconductor layer of a second conductivity type provided between the second columnar unit and the second semiconductor portion; and a light emitting layer provided between the second semiconductor portion and the second semiconductor layer; and a resin unit covering a side surface along the first direction of the first columnar unit, a side surface along the first direction of the second columnar unit, a side surface of the light emitting unit, and a surface on a side of the first columnar unit and the second columnar unit of the light emitting unit, the optical layer including a light transmissive resin and a plurality of particles dispersed in the light transmissive resin and configured to absorb at least part of a first light emitted from the light emitting layer and emit a second light of a wavelength different from a wavelength of the first light, the optical layer including a first portion and a second portion provided between the first portion and the first semiconductor layer and including the particle at a concentration higher than a concentration of the particle in the first portion, there being no seam between the first portion and the second portion, wherein a thickness of the second portion is 200 micrometers or less. - View Dependent Claims (17, 20)
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16. (canceled)
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18. A semiconductor light emitting device comprising:
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a conductive first columnar unit extending in a first direction; a conductive second columnar unit provided apart from the first columnar unit in a second direction crossing the first direction and extending in the first direction; an optical layer provided apart from the first columnar unit and the second columnar unit in the first direction; a light emitting unit including; a first semiconductor layer of a first conductivity type including; a first semiconductor portion provided between at least part of the first columnar unit and the optical layer; and a second semiconductor portion provided between the second columnar unit and the optical layer; a second semiconductor layer of a second conductivity type provided between the second columnar unit and the second semiconductor portion; and a light emitting layer provided between the second semiconductor portion and the second semiconductor layer; and a resin unit covering a side surface along the first direction of the first columnar unit, a side surface along the first direction of the second columnar unit, a side surface of the light emitting unit, and a surface on a side of the first columnar unit and the second columnar unit of the light emitting unit, the optical layer including a light transmissive resin and a plurality of particles dispersed in the light transmissive resin and configured to absorb at least part of a first light emitted from the light emitting layer and emit a second light of a wavelength different from a wavelength of the first light, the optical layer including a first portion and a second portion provided between the first portion and the first semiconductor layer and including the particle at a concentration higher than a concentration of the particle in the first portion, there being no seam between the first portion and the second portion, wherein a concentration of the particle in the first portion is 5% or less and more than 0%, and a concentration of the particle in the second portion is not less than 40% and not more than 95%.
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19. A semiconductor light emitting device comprising:
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a conductive first columnar unit extending in a first direction; a conductive second columnar unit provided apart from the first columnar unit in a second direction crossing the first direction and extending in the first direction; an optical layer provided apart from the first columnar unit and the second columnar unit in the first direction; a light emitting unit including; a first semiconductor layer of a first conductivity type including; a first semiconductor portion provided between at least part of the first columnar unit and the optical layer; and a second semiconductor portion provided between the second columnar unit and the optical layer; a second semiconductor layer of a second conductivity type provided between the second columnar unit and the second semiconductor portion; and a light emitting layer provided between the second semiconductor portion and the second semiconductor layer; and a resin unit covering a side surface along the first direction of the first columnar unit, a side surface along the first direction of the second columnar unit, a side surface of the light emitting unit, and a surface on a side of the first columnar unit and the second columnar unit of the light emitting unit, the optical layer including a light transmissive resin and a plurality of particles dispersed in the light transmissive resin and configured to absorb at least part of a first light emitted from the light emitting layer and emit a second light of a wavelength different from a wavelength of the first light, the optical layer including a first portion and a second portion provided between the first portion and the first semiconductor layer and including the particle at a concentration higher than a concentration of the particle in the first portion, there being no seam between the first portion and the second portion, wherein a thickness of the first portion is not less than 20 micrometers and not more than 100 micrometers and a thickness of the second portion is 40 micrometers or more.
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Specification