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Strained and Uniform Doping Technique for FINFETs

  • US 20140252412A1
  • Filed: 03/06/2013
  • Published: 09/11/2014
  • Est. Priority Date: 03/06/2013
  • Status: Active Grant
First Claim
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1. A method to form a strained channel within a field-effect transistor, comprising:

  • providing a substrate comprising a source region, a drain region, and a gate;

    forming a lightly-doped drain region in a vicinity of a boundary between the gate and the drain region or the source region;

    forming a recess within the source region or the drain region;

    exposing the substrate to a pulse of a phosphorous-containing source vapor to deposit an epitaxial material in the recess;

    exposing the substrate to a continuous etchant flow of one or more vapor etchants configured to selectively remove amorphous portions of the epitaxial material from the recess; and

    alternating between repeated pulses of the phosphorous-containing source vapor and the continuous etchant flow for selective removal of the amorphous portions of the epitaxial material in the recess.

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