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SEMICONDUCTOR DEVICE WITH INCREASED SAFE OPERATING AREA

  • US 20140252472A1
  • Filed: 03/11/2013
  • Published: 09/11/2014
  • Est. Priority Date: 03/11/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate having a surface;

    a composite body region disposed in the substrate, having a first conductivity type, and comprising a body contact region at the surface of the substrate and a well in which a channel is formed during operation;

    a source region disposed in the substrate adjacent the composite body region and having a second conductivity type; and

    an isolation region disposed between the body contact region and the source region;

    wherein;

    the composite body region further comprises a body conduction path region contiguous with and under the source region; and

    the body conduction path region has a higher dopant concentration level than the well.

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