SEMICONDUCTOR DEVICE WITH INCREASED SAFE OPERATING AREA
First Claim
1. A semiconductor device comprising:
- a substrate having a surface;
a composite body region disposed in the substrate, having a first conductivity type, and comprising a body contact region at the surface of the substrate and a well in which a channel is formed during operation;
a source region disposed in the substrate adjacent the composite body region and having a second conductivity type; and
an isolation region disposed between the body contact region and the source region;
wherein;
the composite body region further comprises a body conduction path region contiguous with and under the source region; and
the body conduction path region has a higher dopant concentration level than the well.
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Abstract
A semiconductor device includes a substrate having a surface, a composite body region disposed in the substrate, having a first conductivity type, and comprising a body contact region at the surface of the substrate and a well in which a channel is formed during operation, a source region disposed in the semiconductor substrate adjacent the composite body region and having a second conductivity type, and an isolation region disposed between the body contact region and the source region. The composite body region further includes a body conduction path region contiguous with and under the source region, and the body conduction path region has a higher dopant concentration level than the well.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a substrate having a surface; a composite body region disposed in the substrate, having a first conductivity type, and comprising a body contact region at the surface of the substrate and a well in which a channel is formed during operation; a source region disposed in the substrate adjacent the composite body region and having a second conductivity type; and an isolation region disposed between the body contact region and the source region; wherein; the composite body region further comprises a body conduction path region contiguous with and under the source region; and the body conduction path region has a higher dopant concentration level than the well. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An electronic apparatus comprising:
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a substrate; and a field-effect transistor device in the substrate, the field-effect transistor device comprising; a first semiconductor region having a first conductivity type and comprising a well in which a channel is formed during operation; and a second semiconductor region adjacent the first semiconductor region and having a second conductivity type; wherein; the first semiconductor region comprises an opposing current terminal extension region contiguous with and under the second semiconductor region and having the first conductivity type; and the opposing current terminal extension region has a higher dopant concentration level than the well. - View Dependent Claims (12, 13, 14, 15)
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16. A method of fabricating semiconductor device, the method comprising:
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forming a well of a composite body region in a substrate, the composite body region having a first conductivity type, wherein a channel is formed in the well during operation; forming a source region in the substrate adjacent the composite body region and having a second conductivity type; and forming a body conduction path region of the composite body region with a dopant implantation configured to form an opposing source extension region having the first conductivity type, the body conduction path region being disposed contiguous with and under the source region. - View Dependent Claims (17, 18, 19, 20)
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Specification