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TRANSISTOR INCLUDING A GATE ELECTRODE EXTENDING ALL AROUND ONE OR MORE CHANNEL REGIONS

  • US 20140252481A1
  • Filed: 03/11/2013
  • Published: 09/11/2014
  • Est. Priority Date: 03/11/2013
  • Status: Active Grant
First Claim
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1. A semiconductor structure, comprising:

  • a substrate; and

    a transistor, the transistor comprising;

    a raised source region and a raised drain region provided above said substrate;

    one or more elongated semiconductor lines connected between said raised source region and said raised drain region, wherein a longitudinal direction of each of said one or more elongated semiconductor lines extends substantially along a horizontal direction that is perpendicular to a thickness direction of said substrate, each of said elongated semiconductor lines comprising a channel region;

    a gate electrode that extends all around each of said channel regions of said one or more elongated semiconductor lines; and

    a gate insulation layer provided between each of said one or more elongated semiconductor lines and said gate electrode.

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