WAFER STRUCTURE AND POWER DEVICE USING THE SAME
First Claim
1. A wafer structure for a power device, the wafer structure comprising:
- a) a first doping layer having a high doping concentration;
b) a second doping layer on said first doping layer, wherein a doping concentration of said second doping layer is less than said high doping concentration; and
c) a third doping layer on said second doping layer, wherein a doping concentration of said third doping layer is less than said doping concentration of said second doping layer.
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Accused Products
Abstract
In one embodiment, a method of making a super-junction MOS transistor in a wafer can include: (i) forming a first doping layer having a high doping concentration; (ii) forming a second doping layer on the first doping layer, wherein a doping concentration of the second doping layer is less than a doping concentration of the first doping layer; (iii) forming a third doping layer on the second doping layer, wherein the third doping layer comprises an intrinsic layer; (iv) etching through the third doping layer and partially through the second doping layer to form trenches; and (v) filling the trenches to form pillar structures.
12 Citations
20 Claims
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1. A wafer structure for a power device, the wafer structure comprising:
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a) a first doping layer having a high doping concentration; b) a second doping layer on said first doping layer, wherein a doping concentration of said second doping layer is less than said high doping concentration; and c) a third doping layer on said second doping layer, wherein a doping concentration of said third doping layer is less than said doping concentration of said second doping layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of making a super-junction MOS transistor in a wafer, the method comprising:
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a) forming a first doping layer having a high doping concentration; b) forming a second doping layer on said first doping layer, wherein a doping concentration of said second doping layer is less than a doping concentration of said first doping layer; c) forming a third doping layer on said second doping layer, wherein said third doping layer comprises an intrinsic layer; d) etching through said third doping layer and partially through said second doping layer to form trenches; and e) filling said trenches to form pillar structures. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification