WAFER STRUCTURE AND POWER DEVICE USING THE SAME
First Claim
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1. A wafer structure configured for a power device, the wafer structure comprising:
- a) a first doping layer having a high doping concentration;
b) a second doping layer on said first doping layer, wherein a doping concentration of said second doping layer is less than said high doping concentration; and
c) a third doping layer on said second doping layer, wherein a doping concentration of said third doping layer is greater than said doping concentration of said second doping layer.
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Abstract
In one embodiment, a wafer structure configured for a power device can include: (i) a first doping layer having a high doping concentration; (ii) a second doping layer on the first doping layer, where a doping concentration of the second doping layer is less than the high doping concentration; and (iii) a third doping layer on the second doping layer, where a doping concentration of the third doping layer is greater than the doping concentration of the second doping layer. For example, the power device can be part of a switching voltage regulator.
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Citations
18 Claims
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1. A wafer structure configured for a power device, the wafer structure comprising:
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a) a first doping layer having a high doping concentration; b) a second doping layer on said first doping layer, wherein a doping concentration of said second doping layer is less than said high doping concentration; and c) a third doping layer on said second doping layer, wherein a doping concentration of said third doping layer is greater than said doping concentration of said second doping layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of making a VDMOS transistor in a wafer, the method comprising:
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a) forming a first doping layer having a high doping concentration; b) forming a second doping layer on said first doping layer, wherein a doping concentration of said second doping layer is less than a doping concentration of said first doping layer, and said first and second doping layers and a same dopant type; c) forming a third doping layer on said second doping layer, wherein a doping concentration of said third doping layer is greater than said doping concentration of said second doping layer; d) forming p-type regions in said third doping layer; e) forming n-type source regions in said p-type regions; f) forming polysilicon gates between said p-type regions and above said third doping layer; and g) forming a metal layer for connection to said n-type source regions. - View Dependent Claims (15, 16, 17, 18)
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Specification