CRYSTALLIZATION AND BLEACHING OF DIAMOND-LIKE CARBON AND SILICON OXYNITRIDE THIN FILMS

• US 20140255616A1
• Filed: 02/28/2014
• Published: 09/11/2014
• Est. Priority Date: 03/06/2013
• Status: Active Grant

• Current Assignee: Corning Incorporated
• Original Assignee: Corning Incorporated
• Inventors: Paulson, Charles Andrew
• Granted Patent: US 9,328,422 B2
• Time in Patent Office: Days
• US Class Current: 427/554
• CPC Class Codes: C23C 14/5813 using lasers
• CPC Class Codes: C23C 16/26 Deposition of carbon only
• CPC Class Codes: C23C 16/308 Oxynitrides
• CPC Class Codes: C23C 16/56 After-treatment

Abstract

Optically transparent diamond-like carbon (DLC) thin films are formed using relatively low-temperature deposition conditions followed by a post-deposition bleaching step. The bleaching can include exposure of an as-deposited thin film to UV laser radiation, which reduces the concentration of defects in the film. The method is compatible with temperature-sensitive substrates, and can be used to form water clear DLC layers on glass substrates, for example, which can be used in display applications.

Claims

1. A method of forming an optically-transparent thin film, comprising,

providing a defect-containing diamond-like carbon or silicon oxynitride thin film on a substrate;

and

irradiating the defect-containing thin film with ultraviolet radiation to reduce a concentration of the defects within the film and form an optically transparent diamond-like carbon or silicon oxynitride thin film on the substrate.

2. The method according to claim 1, wherein providing a defect-containing diamond-like carbon or silicon oxynitride thin film on a substrate comprises forming the defect-containing thin film on the substrate via plasma enhanced chemical vapor deposition.

3. The method according to claim 1, wherein providing a defect-containing diamond-like carbon or silicon oxynitride thin film on a substrate comprises forming the defect-containing thin film on the substrate via RF-PECVD.

4. The method according to claim 1, wherein providing a defect-containing diamond-like carbon or silicon oxynitride thin film on a substrate comprises forming the defect-containing thin film on the substrate at a deposition temperature of less than about 400°

C.

5. The method according to claim 1, wherein providing a defect-containing diamond-like carbon or silicon oxynitride thin film on a substrate comprises forming the defect-containing thin film on the substrate at a deposition temperature of less than about 100°

C.

6. The method according to claim 1, wherein the substrate comprises a material selected from the group consisting of glass, plastic, wood and metal.

7. The method according to claim 1, wherein the substrate is a glass substrate.

8. The method according to claim 1, wherein the defect-containing thin film comprises graphitic defects.

9. The method according to claim 1, wherein a source of the ultraviolet radiation is a KrF pulsed laser.

10. The method according to claim 1, wherein the ultraviolet radiation has a wavelength of about 248 nm.

11. The method according to claim 1, wherein the ultraviolet radiation comprises laser radiation and irradiating the defect-containing thin film with ultraviolet radiation further comprises scanning the ultraviolet radiation over a surface of the defect-containing thin film.

12. The method according to claim 1, wherein the defect-containing thin film is irradiated for less than 5 min.

13. The method according to claim 1, wherein an irradiated region of the thin film is substantially free of graphite.

14. The method according to claim 1, wherein an irradiated region of the thin film is water clear.

15. The method according to claim 1, wherein the transparent thin film has a thickness of from about 100 nm to about 5000 nm.