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Semiconductor Device and Method for Forming the Same

  • US 20140256113A1
  • Filed: 03/15/2013
  • Published: 09/11/2014
  • Est. Priority Date: 03/11/2013
  • Status: Active Grant
First Claim
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1. A method of forming a device, comprising:

  • forming a recess in a substrate comprising a semiconductor material;

    filling a dielectric layer in the recess, wherein a sidewall of the dielectric layer is in contact with and forms an interface with the semiconductor material of the substrate;

    forming a capping layer over the substrate and the dielectric layer, wherein the capping layer covers the interface;

    removing a top portion of the capping layer, while leaving a bottom portion of the capping layer over the dielectric layer; and

    forming a gate structure over the remaining capping layer.

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