SUBSTRATE LIQUID PROCESSING METHOD, SUBSTRATE LIQUID PROCESSING APPARATUS, AND STORAGE MEDIUM

• US 20140261570A1
• Filed: 02/21/2014
• Published: 09/18/2014
• Est. Priority Date: 03/15/2013
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Orii, Takehiko, Shindo, Naoki
• Application Number:
  US14/186,131
• Publication Number:
  US 20140261570A1
• Time in Patent Office: Days
• US Class Current: 134/31
• CPC Class Codes: H01L 21/02052 Wet cleaning only H01L21/02085 takes precedence
• CPC Class Codes: H01L 21/02057 Cleaning during device manufacture
• CPC Class Codes: H01L 21/67 Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere processes per se H01L21/30, H01L21/46, H01L23/00; simple temporary support means, e.g. using adhesives, electric or magnetic means H01L21/68, H01L21/302; apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto H01L24/74;

Abstract

Disclosed is a substrate liquid processing method. The substrate liquid processing method includes: forming a liquid film of a processing liquid having a diameter smaller than that of the substrate on a surface of a substrate by providing the processing liquid to a central portion of the surface of the substrate from a first nozzle while rotating the substrate around a vertical axis in a horizontal posture; supplying, from a second nozzle, a processing liquid, which is the same as the processing liquid supplied from the first nozzle, to a peripheral edge of the liquid film of the processing liquid formed on the surface by the first nozzle; and moving a position of supplying the processing liquid from the second nozzle to the surface of the substrate toward a peripheral edge of the substrate and as a result, expanding the liquid film of the processing liquid toward the peripheral edge of the substrate.

Claims

1. A substrate liquid processing method comprising:

forming a liquid film of a processing liquid having a diameter smaller than that of the substrate on a surface of a substrate by providing the processing liquid to a central portion of the surface of the substrate from a first nozzle while rotating the substrate around a vertical axis in a horizontal posture;

supplying, from a second nozzle, a processing liquid, which is the same as the processing liquid supplied from the first nozzle, to a peripheral edge of the liquid film of the processing liquid formed on the surface by the first nozzle; and

moving a position of supplying the processing liquid from the second nozzle to the surface of the substrate toward a peripheral edge of the substrate and as a result, expanding the liquid film of the processing liquid toward the peripheral edge of the substrate.

2. The substrate liquid processing method of claim 1, wherein, when viewed from a top, an ejection direction of the processing liquid from the second nozzle follows a flow direction of the processing liquid from the first nozzle at a position where the processing liquid from the second nozzle arrives at the surface of the substrate.

3. The substrate liquid processing method of claim 1, further comprising:

prior to the forming of the liquid film on the surface of the substrate, performing a chemical liquid processing on the substrate by supplying the chemical liquid to the central portion of the surface of the substrate to form a liquid film on the surface of the substrate,

wherein the processing liquid is a rinse liquid formed of de-ionized water.

4. The substrate liquid processing method of claim 3, wherein the chemical liquid processing enhances a hydrophobic property of the surface of the substrate after the chemical liquid processing as compared to a hydrophobic property of the surface of the substrate prior to the chemical liquid processing.

5. The substrate liquid processing method of claim 1, wherein a moving speed of the second nozzle is equal to an expanding speed of the processing liquid by a centrifugal force.

6. The substrate liquid processing method of claim 1, wherein an ejection rate of the processing liquid from the second nozzle is lower than an ejection rate of the processing liquid from the first nozzle.

7. The substrate liquid processing method of claim 1, wherein, in the forming of the liquid film on the surface of the substrate, the processing liquid is ejected toward the substrate from the first nozzle in a form of a continuous liquid flow.

8. The substrate liquid processing method of claim 1, wherein, in the forming of the liquid film on the surface of the substrate, the processing liquid is ejected toward the substrate from the first nozzle in a form of liquid droplets.

9. The substrate liquid processing method of claim 1, wherein, in the forming of the liquid film on the surface of the substrate, the processing liquid is ejected toward the substrate from the first nozzle in a form of vapor, and the vapor is condensed to liquid on the substrate.

10. The substrate liquid processing method of claim 9, further comprising:

supplying a cooling liquid to a rear surface of the substrate so as to facilitate the condensation of the vapor.

11. A substrate liquid processing apparatus, comprising:

a substrate holding unit configured to hold the substrate in a horizontal posture;

a rotary drive unit configured to rotate the holding unit;

a first nozzle configured to eject a processing liquid toward the substrate held by the holding unit;

a second nozzle configured to eject a processing liquid toward the substrate held by the holding unit;

a nozzle drive unit configured to move the second nozzle; and

a control unit,

wherein the control unit is configured to control an operation of the substrate liquid processing apparatus such that the substrate liquid processing apparatus executes;

a process of forming a liquid film of a processing liquid having a diameter smaller than that of the substrate on a surface of a substrate by providing the processing liquid to a central portion of the surface of the substrate from a first nozzle while rotating the substrate around a vertical axis in a horizontal posture;

a process of supplying, from a second nozzle, a processing liquid, which is the same as the processing liquid supplied from the first nozzle, to a peripheral edge of the liquid film of the processing liquid formed on the surface by the first nozzle; and

a process of moving a position of supplying the processing liquid from the second nozzle to the surface of the substrate toward a peripheral edge of the substrate and as a result, expanding the liquid film of the processing liquid toward the peripheral edge of the substrate.

12. The substrate liquid processing apparatus of claim 11, wherein, when viewed from a top, an ejection direction of the processing liquid from the second nozzle follows a flow direction of the processing liquid from the first nozzle at a position where the processing liquid from the second nozzle arrives at the surface of the substrate.

13. The substrate liquid processing apparatus of claim 11, further comprising:

a third nozzle configured to eject a chemical liquid toward the substrate held by the holding unit,

wherein the processing liquid is a rinse liquid formed of de-ionized water, and

the control unit causes, prior to the process of forming the liquid film on the surface of the substrate, the substrate liquid processing apparatus to perform a chemical liquid processing on the substrate by supplying the chemical liquid to the central portion of the surface of the substrate to form a liquid film on the surface of the substrate.

14. The subsequent liquid processing apparatus of claim 11, wherein the first nozzle is configured to eject the processing liquid toward the substrate from the first nozzle in a form of a continuous liquid flow.

15. The subsequent liquid processing apparatus of claim 11, wherein the first nozzle is configured to eject the processing liquid toward the substrate from the first nozzle in a form of liquid droplets.

16. The subsequent liquid processing apparatus of claim 11, wherein the first nozzle is configured to eject the processing liquid toward the substrate from the first nozzle in a form of vapor, and the vapor is condensed to liquid on the substrate.

17. The subsequent liquid processing apparatus of claim 16, further comprising:

a cooling liquid nozzle configured to supply a cooling liquid to a rear surface of the substrate so as to facilitate the condensation of the vapor.

18. A non-transitory computer readable storage medium storing a computer-readable program that is executable by a control computer of a substrate liquid processing apparatus, and when executed, causes the control computer to control the substrate liquid processing apparatus to execute a substrate liquid processing method,

wherein the substrate liquid processing method comprises:

forming a liquid film of a processing liquid having a diameter smaller than that of the substrate on a surface of a substrate by providing the processing liquid to a central portion of the surface of the substrate from a first nozzle while rotating the substrate around a vertical axis in a horizontal posture;

supplying, from a second nozzle, a processing liquid, which is the same as the processing liquid supplied from the first nozzle, to a peripheral edge of the liquid film of the processing liquid formed on the surface by the first nozzle; and

moving a position of supplying the processing liquid from the second nozzle to the surface of the substrate toward a peripheral edge of the substrate and as a result, expanding the liquid film of the processing liquid toward the peripheral edge of the substrate.