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UV-ASSISTED REACTIVE ION ETCH FOR COPPER

  • US 20140262755A1
  • Filed: 03/09/2014
  • Published: 09/18/2014
  • Est. Priority Date: 03/13/2013
  • Status: Abandoned Application
First Claim
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1. A plasma etching apparatus for etching copper, comprising:

  • a chamber body having a process chamber adapted to receive a substrate;

    an RF source coupled to an RF electrode;

    a pedestal located in the processing chamber and adapted to support a substrate; and

    a UV source configured to delivery UV light to the processing chamber during at least a portion of an etch process performed within the plasma etching apparatus.

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