UV-ASSISTED REACTIVE ION ETCH FOR COPPER
First Claim
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1. A plasma etching apparatus for etching copper, comprising:
- a chamber body having a process chamber adapted to receive a substrate;
an RF source coupled to an RF electrode;
a pedestal located in the processing chamber and adapted to support a substrate; and
a UV source configured to delivery UV light to the processing chamber during at least a portion of an etch process performed within the plasma etching apparatus.
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Abstract
In some embodiments, a plasma etching apparatus is provided for etching copper that includes (1) a chamber body having a process chamber adapted to receive a substrate; (2) an RF source coupled to an RF electrode; (3) a pedestal located in the processing chamber and adapted to support a substrate; and (4) a UV source configured to delivery UV light to the processing chamber during at least a portion of an etch process performed within the plasma etching apparatus. Numerous other aspects are provided.
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Citations
20 Claims
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1. A plasma etching apparatus for etching copper, comprising:
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a chamber body having a process chamber adapted to receive a substrate; an RF source coupled to an RF electrode; a pedestal located in the processing chamber and adapted to support a substrate; and a UV source configured to delivery UV light to the processing chamber during at least a portion of an etch process performed within the plasma etching apparatus. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A copper plasma etching method, comprising:
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providing a substrate within a process chamber; providing a process gas to the process chamber; exposing the process gas in the process chamber to RF pulses; plasma etching the substrate within the process chamber; and exposing at least one of the process gas and substrate to UV light during at least a portion of the plasma etching. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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20. A copper plasma etching method, comprising:
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providing a substrate within a process chamber; providing a process gas to the process chamber; exposing the process gas in the process chamber to RF energy to generate a plasma within the process chamber; plasma etching the substrate within the process chamber; and exposing at least one of the process gas and substrate to UV light during at least a portion of the plasma etching.
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Specification