FULL COLOR SINGLE PIXEL INCLUDING DOUBLET OR QUADRUPLET SI NANOWIRES FOR IMAGE SENSORS

• US 20140263967A1
• Filed: 05/30/2014
• Published: 09/18/2014
• Est. Priority Date: 12/14/2010
• Status: Active Grant

• Current Assignee: Zena Technologies, Inc.
• Original Assignee: Zena Technologies, Inc.
• Inventors: Wober, Munib
• Granted Patent: US 9,543,458 B2
• Time in Patent Office: Days
• US Class Current: 250/208.1
• CPC Class Codes: B82Y 15/00 Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: G02B 6/107 Subwavelength-diameter waveguides, e.g. nanowires
• CPC Class Codes: G02B 6/4298 coupling with non-coherent light sources and/or radiation detectors, e.g. lamps, incandescent bulbs, scintillation chambers
• CPC Class Codes: H01L 27/14601 Structural or functional details thereof
• CPC Class Codes: H01L 27/14607 Geometry of the photosensitive area
• CPC Class Codes: H01L 31/035227 the quantum structure being quantum wires, or nanorods carbon nanotubes H10K85/211
• CPC Class Codes: Y10S 977/954 Of radiant energy

Abstract

An image sensor comprising a substrate and one or more of pixels thereon. The pixels have subpixels therein comprising nanowires sensitive to light of different color. The nanowires are functional to covert light of the colors they are sensitive to into electrical signals.

Claims

1. An image sensor comprising a substrate and one or more of pixels thereon, wherein each of the pixels comprises a first subpixel and a second subpixel;

the first subpixel comprises a first nanowire;

the second subpixel comprises a second nanowire;

the first and second nanowires extend essentially perpendicularly from the substrate, wherein each pixel of the image sensor further comprises one or more photodiodes.

2. The image sensor of claim 1, wherein the substrate comprises silicon, silicon oxide, silicon nitride, sapphire, diamond, silicon carbide, gallium nitride, germanium, indium gallium arsenide, lead sulfide and/or a combination thereof.

3. The image sensor of claim 1, wherein at least one pixel comprises a clad;

the first subpixel and the second subpixel of the at least one pixel are embedded in the clad.

4. The image sensor of claim 3, wherein the clad is substantially transparent to visible light.

5. The image sensor of claim 3, further comprising couplers above each of the pixels, each of the couplers having a convex surface and being effective to focus substantially all visible light impinged thereon into the clad.

6. The image sensor of claim 1, wherein the first nanowire and the second nanowire have different absorption spectra.

7. The image sensor of claim 1, wherein each of the first and second nanowires has a p-n or p-i-n junction therein.

8. The image sensor of claim 1, being operable to absorb at least 50% of all visible light impinged thereon.

9. The image sensor of claim 1, further comprising electronic circuitry operable to detect electrical signals generated by the first and second nanowires.

10. The image sensor of claim 1, wherein the pixels have different orientations.

11. A method of manufacturing an image sensor, comprising dry etching or VLS growth, wherein the image sensor comprises a substrate and one or more of pixels thereon, wherein each of the pixels comprises at a first subpixel and a second subpixel, the first subpixel comprises a first nanowire, the second subpixel comprises a second nanowire, wherein the first and second nanowires extend essentially perpendicularly from the substrate, wherein each pixel of the image sensor further comprises one or more photodiodes.

12. The method of claim 11, wherein each of the pixels further comprises a third subpixel and the third subpixel comprises a third nanowire operable to generate an electrical signal upon exposure to light of a third wavelength different from the first and second wavelengths, wherein the third nanowire extends essentially perpendicularly from the substrate.

13. The method of claim 12, wherein each of the pixels further comprises a fourth subpixel and the fourth subpixel comprises a fourth nanowire operable to generate an electrical signal upon exposure to light of a fourth wavelength different from the first, second and third wavelengths, wherein the fourth nanowire extends essentially perpendicularly from the substrate.

14. The method of claim 11, wherein the photodiodes have absorption spectra different from absorption spectra of the first and second nanowires.

15. The method of claim 11, the image sensor further comprises an infrared filter operable to prevent infrared light from reaching the pixels.

16. A method of sensing an image comprises:

projecting the image onto an image sensor, wherein the image sensor comprises a substrate and one or more of pixels thereon, wherein each of the pixels comprises at a first subpixel and a second subpixel, the first subpixel comprises a first nanowire, the second subpixel comprises a second nanowire, wherein the first and second nanowires extend essentially perpendicularly from the substrate, wherein each pixel of the image sensor further comprises one or more photodiodes;

detecting the electrical signals from the first nanowire and the second nanowire; and

calculating a color of each pixel from the electrical signals.

17. The method of claim 16, wherein the first nanowire and/or the second nanowire has a transistor therein or thereon.

18. The method of claim 16, wherein the first and the second nanowires are adapted to absorb infra-red (IR) light.

19. The method of claim 16, wherein different pixels of the one or more of pixels comprise spatially separated clads.

20. The method of claim 16, wherein the one or more photodiodes are located between the substrate and the first and second nanowires.