Group III-V/Zinc Chalcogenide Alloyed Semiconductor Quantum Dots
First Claim
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1. A method of forming a quantum dot (QD), the method comprising:
- reacting a group III precursor with a group V precursor to form a semiconductor core in the presence of a molecular cluster compound formed in situ by the reaction of a zinc precursor and a chalcogen precursor.
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Abstract
A scalable method for the manufacture of narrow, bright, monodisperse, photo-luminescent quantum dots prepared in the presence of a Group II-VI molecular seeding cluster fabricated in situ from a zinc salt and a thiol or selenol compound. Exemplary quantum dots have a core containing indium, phosphorus, zinc and either sulfur or selenium.
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Citations
19 Claims
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1. A method of forming a quantum dot (QD), the method comprising:
- reacting a group III precursor with a group V precursor to form a semiconductor core in the presence of a molecular cluster compound formed in situ by the reaction of a zinc precursor and a chalcogen precursor.
- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of forming photo-luminescent InPZnS quantum dot (QD) cores comprising:
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providing a mixture comprising indium myristate, myristic acid, zinc acetate, tris(trialkylsilyl)phosphine and an alkane thiol; heating the mixture for a period of time at a first temperature; adding additional tris(trimethylsilyl)phosphine to the mixture; raising the temperature of the mixture to a second, higher temperature; and maintaining the mixture at the second temperature for at least 24 hours. - View Dependent Claims (17, 18, 19)
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Specification