SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
First Claim
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1. A semiconductor device comprising:
- a chip-mounting portion having a chip-mounting surface;
a wide gap semiconductor chip having a main surface and a back surface on an opposite side thereof, having a first electrode formed on the main surface and a second electrode formed on the back surface, and mounted on the chip-mounting surface of the chip-mounting portion;
a porous first sintered Ag layer provided between the chip-mounting surface and the wide gap semiconductor chip and bonding the chip-mounting portion and the wide gap semiconductor chip;
a first resin portion covering a surface of the first sintered Ag layer and formed in a fillet shape;
a first lead electrically connected to the first electrode of the wide gap semiconductor chip; and
a second lead electrically connected to the second electrode of the wide gap semiconductor chip,wherein the first resin portion covers a part of a side surface of the wide gap semiconductor chip.
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Abstract
A semiconductor device includes a die pad, an SiC chip mounted on the die pad, a porous first sintered Ag layer bonding the die pad and the SiC chip, and a reinforcing resin portion covering a surface of the first sintered Ag layer and formed in a fillet shape. The semiconductor device further includes a source lead electrically connected to a source electrode of the SiC chip, a gate lead electrically connected to a gate electrode, a drain lead electrically connected to a drain electrode, and a sealing body which covers the SiC chip, the first sintered Ag layer, and a part of the die pad, and the reinforcing resin portion covers a part of a side surface of the SiC chip.
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Citations
19 Claims
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1. A semiconductor device comprising:
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a chip-mounting portion having a chip-mounting surface; a wide gap semiconductor chip having a main surface and a back surface on an opposite side thereof, having a first electrode formed on the main surface and a second electrode formed on the back surface, and mounted on the chip-mounting surface of the chip-mounting portion; a porous first sintered Ag layer provided between the chip-mounting surface and the wide gap semiconductor chip and bonding the chip-mounting portion and the wide gap semiconductor chip; a first resin portion covering a surface of the first sintered Ag layer and formed in a fillet shape; a first lead electrically connected to the first electrode of the wide gap semiconductor chip; and a second lead electrically connected to the second electrode of the wide gap semiconductor chip, wherein the first resin portion covers a part of a side surface of the wide gap semiconductor chip. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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2. A semiconductor device comprising:
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a chip-mounting portion having a chip-mounting surface; a wide gap semiconductor chip having a main surface and a back surface on an opposite side thereof, having a first electrode formed on the main surface and a second electrode formed on the back surface, and mounted on the chip-mounting surface of the chip-mounting portion; a first lead electrically connected to the first electrode of the wide gap semiconductor chip; a second lead electrically connected to the second electrode of the wide gap semiconductor chip; a metal wire electrically connecting the first electrode and the first lead to each other; and a porous second sintered Ag layer disposed on the first electrode and covering a wire bonding portion between the metal wire and the first electrode, wherein the second sintered Ag layer covers a whole surface of the first electrode.
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14. A manufacturing method of a semiconductor device comprising:
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(a) a step of preparing a lead frame provided with a chip-mounting portion having a chip-mounting surface, a first lead disposed in the vicinity of the chip-mounting portion, and a second lead coupled to the chip-mounting portion; (b) a step of supplying first sintered Ag paste onto the chip-mounting surface of the chip-mounting portion and then mounting a wide gap semiconductor chip having a first electrode formed on a main surface thereof and a second electrode formed on a back surface thereof on the first sintered Ag paste; (c) a step of heating the first sintered Ag paste to form a porous first sintered Ag layer and bonding the chip-mounting portion and the wide gap semiconductor chip by the first sintered Ag layer; (d) a step of electrically connecting the first electrode of the wide gap semiconductor chip and the first lead to each other; (e) a step of supplying first liquid resin onto a surface of the first sintered Ag layer and then heating the first resin, thereby forming a first resin portion covering the surface of the first sintered Ag layer and having a fillet shape; and (f) a step of separating the first and second leads from the lead frame, wherein, at the step (e), the first resin portion is formed so as to cover a part of a side surface of the wide gap semiconductor chip. - View Dependent Claims (16, 17, 18, 19)
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15. A manufacturing method of a semiconductor device comprising:
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(a) a step of preparing a lead frame provided with a chip-mounting portion having a chip-mounting surface, a first lead disposed in the vicinity of the chip-mounting portion, and a second lead coupled to the chip-mounting portion; (b) a step of mounting a wide gap semiconductor chip having a first electrode formed on a main surface thereof and a second electrode formed on a back surface thereof on the chip-mounting surface of the chip-mounting portion; (c) a step of connecting the first electrode of the wide gap semiconductor chip and the first lead to each other by a metal wire; (d) a step of supplying second sintered Ag paste to a wire bonding portion of the metal wire on the first electrode and then heating the second sintered Ag paste to form a porous second sintered Ag layer, thereby electrically connecting the first electrode and the metal wire via the second sintered Ag layer; and (e) a step of separating the first and second leads from the lead frame, wherein, at the step (d), the second sintered Ag layer is formed so as to cover a whole surface of the first electrode.
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Specification