SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

• US 20140264383A1
• Filed: 03/14/2014
• Published: 09/18/2014
• Est. Priority Date: 03/15/2013
• Status: Abandoned Application

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Electronics Corporation
• Inventors: NAKAJO, Takuya, KAJIWARA, Ryoichi, ARAI, Katsuo, YATO, Yuichi, OKA, Hiroi, HOZOJI, Hiroshi
• Application Number:
  US14/213,452
• Publication Number:
  US 20140264383A1
• Time in Patent Office: Days
• US Class Current: 257/77
• CPC Class Codes: H01L 21/50 Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
• CPC Class Codes: H01L 2224/0381 Cleaning, e.g. oxide removal step, desmearing
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05073 Single internal layer
• CPC Class Codes: H01L 2224/05082 Two-layer arrangements
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/05553 being rectangular
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/06181 On opposite sides of the body
• CPC Class Codes: H01L 2224/291 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/29111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/29118 Zinc [Zn] as principal constituent
• CPC Class Codes: H01L 2224/29139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/29144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/29294 with a principal constituent of the material being a liquid not provided for in groups H01L2224/292 - H01L2224/29291
• CPC Class Codes: H01L 2224/29439 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/2949 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/3011 : the layer connectors being bonded to at least one common bonding area
• CPC Class Codes: H01L 2224/3201 : Structure
• CPC Class Codes: H01L 2224/32013 : the layer connector being larger than the bonding area, e.g. bond pad
• CPC Class Codes: H01L 2224/32058 : being non uniform along the layer connector
• CPC Class Codes: H01L 2224/32059 : comprising protrusions or indentations
• CPC Class Codes: H01L 2224/32245 : the item being metallic
• CPC Class Codes: H01L 2224/45124 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45139 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/45147 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/45155 : Nickel (Ni) as principal constituent
• CPC Class Codes: H01L 2224/45565 : Single coating layer
• CPC Class Codes: H01L 2224/45616 : Lead (Pb) as principal constituent
• CPC Class Codes: H01L 2224/45639 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/45644 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45664 : Palladium (Pd) as principal constituent
• CPC Class Codes: H01L 2224/4811 : Connecting to a bonding area of the semiconductor or solid-state body located at the far end of the body with respect to the bonding area outside the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/48247 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48472 : the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/48724 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48739 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48744 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48755 : Nickel (Ni) as principal constituent
• CPC Class Codes: H01L 2224/48824 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48839 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48844 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48855 : Nickel (Ni) as principal constituent
• CPC Class Codes: H01L 2224/48997 : Reinforcing structures
• CPC Class Codes: H01L 2224/4903 : Connectors having different sizes, e.g. different diameters
• CPC Class Codes: H01L 2224/49111 : the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/83 : using a layer connector
• CPC Class Codes: H01L 2224/83055 : being oxidating
• CPC Class Codes: H01L 2224/83192 : wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83194 : Lateral distribution of the layer connectors
• CPC Class Codes: H01L 2224/83205 : Ultrasonic bonding
• CPC Class Codes: H01L 2224/83439 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/83801 : Soldering or alloying
• CPC Class Codes: H01L 2224/8384 : Sintering
• CPC Class Codes: H01L 2224/8392 : Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2224/83951 : Forming additional members, e.g. for reinforcing, fillet sealant
• CPC Class Codes: H01L 2224/85 : using a wire connector
• CPC Class Codes: H01L 2224/85205 : Ultrasonic bonding
• CPC Class Codes: H01L 2224/85439 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/85444 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/85455 : Nickel (Ni) as principal constituent
• CPC Class Codes: H01L 2224/8592 : Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2224/85951 : Forming additional members, e.g. for reinforcing
• CPC Class Codes: H01L 2224/92 : Specific sequence of method steps
• CPC Class Codes: H01L 2224/92247 : the second connecting process involving a wire connector
• CPC Class Codes: H01L 23/293 : Organic, e.g. plastic
• CPC Class Codes: H01L 23/295 : containing a filler H01L23/296 takes precedence
• CPC Class Codes: H01L 23/3107 : the device being completely enclosed
• CPC Class Codes: H01L 23/3192 : Multilayer coating
• CPC Class Codes: H01L 23/49 : wire-like arrangements or pins or rods using optical fibres H01L23/48; pins attached to insulating substrates H01L23/49811
• CPC Class Codes: H01L 23/49513 : having bonding material between chip and die pad
• CPC Class Codes: H01L 23/4952 : the additional leads being a bump or a wire
• CPC Class Codes: H01L 23/49562 : for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/49582 : Metallic layers on lead frames
• CPC Class Codes: H01L 23/562 : Protection against mechanical damage H01L23/02, H01L23/28 take precedence
• CPC Class Codes: H01L 23/564 : Details not otherwise provided for, e.g. protection against moisture getters H01L23/26
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/06 : of a plurality of bonding areas
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/30 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 24/92 : Specific sequence of method steps
• CPC Class Codes: H01L 29/1608 : Silicon carbide
• CPC Class Codes: H01L 29/2003 : Nitride compounds
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 : Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/06 : Polymers
• CPC Class Codes: H01L 2924/10272 : Silicon Carbide [SiC]
• CPC Class Codes: H01L 2924/1033 : Gallium nitride [GaN]
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 2924/3512 : Cracking

Abstract

A semiconductor device includes a die pad, an SiC chip mounted on the die pad, a porous first sintered Ag layer bonding the die pad and the SiC chip, and a reinforcing resin portion covering a surface of the first sintered Ag layer and formed in a fillet shape. The semiconductor device further includes a source lead electrically connected to a source electrode of the SiC chip, a gate lead electrically connected to a gate electrode, a drain lead electrically connected to a drain electrode, and a sealing body which covers the SiC chip, the first sintered Ag layer, and a part of the die pad, and the reinforcing resin portion covers a part of a side surface of the SiC chip.

Claims

1. A semiconductor device comprising:

a chip-mounting portion having a chip-mounting surface;

a wide gap semiconductor chip having a main surface and a back surface on an opposite side thereof, having a first electrode formed on the main surface and a second electrode formed on the back surface, and mounted on the chip-mounting surface of the chip-mounting portion;

a porous first sintered Ag layer provided between the chip-mounting surface and the wide gap semiconductor chip and bonding the chip-mounting portion and the wide gap semiconductor chip;

a first resin portion covering a surface of the first sintered Ag layer and formed in a fillet shape;

a first lead electrically connected to the first electrode of the wide gap semiconductor chip; and

a second lead electrically connected to the second electrode of the wide gap semiconductor chip,

wherein the first resin portion covers a part of a side surface of the wide gap semiconductor chip.

3. The semiconductor device according to claim 1, further comprising:

a metal wire electrically connecting the first electrode and the first lead to each other; and

a porous second sintered Ag layer disposed on the first electrode and covering a wire bonding portion between the metal wire and the first electrode,

wherein the second sintered Ag layer covers a whole surface of the first electrode.

4. The semiconductor device according to claim 1, further comprising:

an aluminum wire electrically connecting the first electrode and the first lead to each other.

5. The semiconductor device according to claim 1, further comprising:

an aluminum wire electrically connecting the first electrode and the first lead to each other; and

a second resin portion disposed on the first electrode and covering a wire bonding portion between the first electrode and the aluminum wire.

6. The semiconductor device according to claim 3,

wherein a first noble metal plating film is formed on the chip-mounting surface of the chip-mounting portion.

7. The semiconductor device according to claim 6,

wherein the wide gap semiconductor chip, the first sintered Ag layer or the first and second sintered Ag layers, the first resin portion, and a part of the chip-mounting portion are covered with a third resin portion.

8. The semiconductor device according to claim 1,

wherein an organic Zn film is formed at an interface between the first sintered Ag layer and the first resin portion.

9. The semiconductor device according to claim 7, further comprising:

the metal wire electrically connecting the first electrode and the first lead,

wherein a surface of the metal wire is covered with a second noble metal plating film.

10. The semiconductor device according to claim 9,

wherein the chip-mounting portion and the first and second leads are made of a material containing copper as a main component.

11. The semiconductor device according to claim 10,

wherein respective surfaces of the chip-mounting portion and the first and second leads are covered with an Ni-plating film.

12. The semiconductor device according to claim 1,

wherein the wide gap semiconductor chip is made of SiC or GaN.

13. The semiconductor device according to claim 1,

wherein a third electrode is formed on the main surface of the wide gap semiconductor chip,

a third lead electrically connected to the third electrode is provided,

the first lead is a source lead,

the second lead is a drain lead, and

the third lead is a gate lead.

2. A semiconductor device comprising:

a chip-mounting portion having a chip-mounting surface;

a wide gap semiconductor chip having a main surface and a back surface on an opposite side thereof, having a first electrode formed on the main surface and a second electrode formed on the back surface, and mounted on the chip-mounting surface of the chip-mounting portion;

a first lead electrically connected to the first electrode of the wide gap semiconductor chip;

a second lead electrically connected to the second electrode of the wide gap semiconductor chip;

a metal wire electrically connecting the first electrode and the first lead to each other; and

a porous second sintered Ag layer disposed on the first electrode and covering a wire bonding portion between the metal wire and the first electrode,

wherein the second sintered Ag layer covers a whole surface of the first electrode.

14. A manufacturing method of a semiconductor device comprising:

(a) a step of preparing a lead frame provided with a chip-mounting portion having a chip-mounting surface, a first lead disposed in the vicinity of the chip-mounting portion, and a second lead coupled to the chip-mounting portion;

(b) a step of supplying first sintered Ag paste onto the chip-mounting surface of the chip-mounting portion and then mounting a wide gap semiconductor chip having a first electrode formed on a main surface thereof and a second electrode formed on a back surface thereof on the first sintered Ag paste;

(c) a step of heating the first sintered Ag paste to form a porous first sintered Ag layer and bonding the chip-mounting portion and the wide gap semiconductor chip by the first sintered Ag layer;

(d) a step of electrically connecting the first electrode of the wide gap semiconductor chip and the first lead to each other;

(e) a step of supplying first liquid resin onto a surface of the first sintered Ag layer and then heating the first resin, thereby forming a first resin portion covering the surface of the first sintered Ag layer and having a fillet shape; and

(f) a step of separating the first and second leads from the lead frame,

wherein, at the step (e), the first resin portion is formed so as to cover a part of a side surface of the wide gap semiconductor chip.

16. The manufacturing method of a semiconductor device according to claim 14,

wherein, at the step (d), the first electrode and the first lead are electrically connected to each other by a metal wire,

after the step (e) and before the step (f), a step of supplying second sintered Ag paste to a wire bonding portion of the metal wire on the first electrode and then heating the second sintered Ag paste to form a porous second sintered Ag layer, thereby electrically connecting the first electrode and the metal wire to each other via the second sintered Ag layer is provided, and

the second sintered Ag layer is formed so as to cover a whole surface of the first electrode.

17. The manufacturing method of a semiconductor device according to claim 14,

wherein, at the step (d), the first electrode and the first lead are electrically connected to each other by an aluminum wire.

18. The manufacturing method of a semiconductor device according to claim 14,

wherein, at the step (d), the first electrode and the first lead are electrically connected to each other by an aluminum wire, and

at the step (e), a second resin is supplied to a wire bonding portion of the aluminum wire on the first electrode and the second resin is then heated to form a second resin portion covering the wire bonding portion.

19. The manufacturing method of a semiconductor device according to claim 14,

wherein, after the step (d) and before the step (e), organic Zn compound solution is supplied onto a part of the chip-mounting portion and the first sintered Ag layer, and the organic Zn compound solution is then heated, thereby forming an organic Zn film on a part of the chip-mounting portion and a surface of the first sintered Ag layer.

15. A manufacturing method of a semiconductor device comprising:

(a) a step of preparing a lead frame provided with a chip-mounting portion having a chip-mounting surface, a first lead disposed in the vicinity of the chip-mounting portion, and a second lead coupled to the chip-mounting portion;

(b) a step of mounting a wide gap semiconductor chip having a first electrode formed on a main surface thereof and a second electrode formed on a back surface thereof on the chip-mounting surface of the chip-mounting portion;

(c) a step of connecting the first electrode of the wide gap semiconductor chip and the first lead to each other by a metal wire;

(d) a step of supplying second sintered Ag paste to a wire bonding portion of the metal wire on the first electrode and then heating the second sintered Ag paste to form a porous second sintered Ag layer, thereby electrically connecting the first electrode and the metal wire via the second sintered Ag layer; and

(e) a step of separating the first and second leads from the lead frame,

wherein, at the step (d), the second sintered Ag layer is formed so as to cover a whole surface of the first electrode.