Semiconductor Device
First Claim
1. A semiconductor device in a semiconductor substrate including a first main surface, comprising a transistor cell, comprising:
- a drift region of a first conductivity type;
a body region of a second conductivity type between the drift region and the first main surface;
an active trench at the first main surface extending into the drift region;
a gate insulating layer at sidewalls and at a bottom side of the active trench;
a gate conductive layer in the active trench;
a source region of the first conductivity type in the body region, and adjacent to the active trench;
a body trench at the first main surface extending into the drift region, the body trench being adjacent to the body region and to the drift region;
an insulating layer at sidewalls and at a bottom side of the body trench, the insulating layer being asymmetric with respect to an axis extending perpendicular to the first main surface at a center of the body trench; and
a conductive layer in the body trench.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device in a semiconductor substrate includes a first main surface and a transistor cell. The transistor cell includes a drift region of a first conductivity type, a body region of a second conductivity type between the drift region and the first main surface, an active trench in the first main surface extending to the drift region, a source region of the first conductivity in the body region adjacent to the active trench, and a body trench at the first main surface extending to the drift region and adjacent to the body region and the drift region. The active trench includes a gate insulating layer at sidewalls and a bottom side, and a gate conductive layer. The body trench includes a conductive layer and an insulating layer at sidewalls and a bottom side, and asymmetric to a perpendicular axis of the first main surface and the body trench center.
5 Citations
26 Claims
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1. A semiconductor device in a semiconductor substrate including a first main surface, comprising a transistor cell, comprising:
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a drift region of a first conductivity type; a body region of a second conductivity type between the drift region and the first main surface; an active trench at the first main surface extending into the drift region; a gate insulating layer at sidewalls and at a bottom side of the active trench; a gate conductive layer in the active trench; a source region of the first conductivity type in the body region, and adjacent to the active trench; a body trench at the first main surface extending into the drift region, the body trench being adjacent to the body region and to the drift region; an insulating layer at sidewalls and at a bottom side of the body trench, the insulating layer being asymmetric with respect to an axis extending perpendicular to the first main surface at a center of the body trench; and a conductive layer in the body trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device in a semiconductor substrate including a first main surface, including a transistor cell, comprising:
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a drift region of a first conductivity type; a body region of a second conductivity type between the drift region and the first main surface; an active trench at the first main surface extending into the drift region; a gate insulating layer at sidewalls and at a bottom side of the active trench; a gate conductive layer in the active trench; a source region of the first conductivity type in the body region adjacent to the active trench; a first body trench at the first main surface extending into the drift region, the body trench being adjacent to the body region and to the drift region; an insulating layer at sidewalls and at a bottom side of the body trench, the insulating layer having a larger thickness than a thickness of the gate insulating layer; and a conductive layer in the body trench. - View Dependent Claims (10)
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11. A semiconductor device in a semiconductor substrate including a first main surface, including a transistor cell, comprising:
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a drift region of a first conductivity type; a body region of a second conductivity type between the drift region and the first main surface; an active trench at the first main surface extending into the drift region; a gate conductive layer in the active trench; a source region of the first conductivity type in the body region adjacent to the active trench; at least a first body trench and a second body trench at the first main surface extending into the drift region, the first and second body trenches being adjacent to the body region and to the drift region; further source regions of the first conductivity type in the body region adjacent to at least one of the first and the second body trenches, at least one of the further source regions being disconnected from a source terminal; an insulating layer at sidewalls and at a bottom side of each of the first and second body trenches; and a conductive layer in each of the first and second body trenches, wherein at least one of the first and second body trenches is different from the active trench. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A semiconductor device in a semiconductor substrate including a first main surface including a transistor cell, comprising:
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a drift region of a first conductivity type; a body region of a second conductivity type, between the drift region and the first main surface; an active trench at the first main surface extending into the drift region, a gate conductive layer being disposed in the active trench; a source region of the first conductivity type in the body region adjacent to the active trench; at least a first body trench and a second body trench at the first main surface extending into the drift region, the first and second body trenches being adjacent to the body region and to the drift region; an insulating layer at sidewalls and at a bottom side of each of the first and second body trenches; and a conductive layer in each of the first and second body trenches, wherein the first and the second body trenches are different from each other. - View Dependent Claims (18, 19)
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20. A semiconductor device formed in a semiconductor substrate including a first main surface, comprising:
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a drift region of a first conductivity type; a body region of a second conductivity type, the body region being disposed between the drift region and the first main surface; a first transistor cell and a second transistor cell, each of the first and second transistor cells comprising an active trench at the first main surface and extending into the drift region; a gate conductive layer disposed in the active trench; and a source region formed in the body region adjacent to the active trench, the semiconductor device further comprising body trenches disposed between the first and the second transistor cells and further source regions, the body trenches being formed in the first main surface and extending into the drift region, the body trenches being adjacent to the body region and the drift region, a conductive material in at least one of the body trenches being connected with a gate terminal and at least one of the further source regions disposed between the body trenches being disconnected from a source terminal. - View Dependent Claims (21, 22, 23, 24, 25, 26)
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Specification