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METHOD OF FORMING A HIGH ELECTRON MOBILITY SEMICONDUCTOR DEVICE

  • US 20140264456A1
  • Filed: 03/13/2014
  • Published: 09/18/2014
  • Est. Priority Date: 03/15/2013
  • Status: Abandoned Application
First Claim
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1. A method of forming a HEM device comprising:

  • providing a base substrate of a first semiconductor material that includes silicon;

    forming a layer that is one of GaN or SiC or other III-N or III-V or II-VI series material overlying the base substrate;

    forming a friable region near an interface of the layer and an underlying material;

    separating a portion of the layer from the base substrate;

    attaching the portion of the layer to an intermediate substrate; and

    forming the HEM device in the portion of the layer.

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