COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) ULTRASONIC TRANSDUCERS AND METHODS FOR FORMING THE SAME
First Claim
Patent Images
1. An apparatus, comprising:
- an ultrasonic transducer; and
an integrated circuit coupled to the ultrasonic transducer, the integrated circuit formed in a CMOS wafer,wherein the ultrasonic transducer comprises;
a cavity formed in the CMOS wafer;
a membrane formed of a material other than monocrystalline silicon overlying the cavity; and
an electrical contact providing electrical connectivity between the membrane and the integrated circuit.
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Abstract
Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
78 Citations
78 Claims
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1. An apparatus, comprising:
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an ultrasonic transducer; and an integrated circuit coupled to the ultrasonic transducer, the integrated circuit formed in a CMOS wafer, wherein the ultrasonic transducer comprises; a cavity formed in the CMOS wafer; a membrane formed of a material other than monocrystalline silicon overlying the cavity; and an electrical contact providing electrical connectivity between the membrane and the integrated circuit.
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2. A method of forming an ultrasonic transducer, the method comprising:
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forming a cavity in a CMOS wafer; bonding a transfer wafer to the CMOS wafer, the transfer wafer having a front face formed of a material not including monocrystalline silicon, wherein bonding the transfer wafer to the CMOS wafer is performed below 450°
C.
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3. An apparatus, comprising:
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a complementary metal oxide semiconductor (CMOS) wafer having an integrated circuit (IC) formed therein; a membrane disposed above a cavity in the CMOS wafer, the membrane being integrated with the CMOS wafer and having a first side proximate the cavity and a second side distal the cavity; and a conductive electrical path contacting the first side of the membrane proximate the cavity and electrically connecting the membrane to the IC. - View Dependent Claims (4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. An ultrasonic transducer, comprising:
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a substrate having a cavity formed therein; and a membrane integrated with the substrate and overlying the cavity, the membrane having a thickness between approximately 0.05 microns and approximately 1 micron. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41)
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42. A method comprising:
forming an ultrasonic transducer by; forming a conductive electrical path connecting an integrated circuit (IC) in a complementary metal oxide semiconductor (CMOS) wafer to a first side of a membrane covering a cavity in the CMOS wafer, the first side of the membrane being proximate the cavity and the membrane further having a second side distal the cavity.
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43. A method of forming an ultrasonic transducer, the method comprising:
forming a conductive electrical path connecting an integrated circuit (IC) in a complementary metal oxide semiconductor (CMOS) wafer to a first side of a membrane covering a cavity in the CMOS wafer, the first side of the membrane being proximate the cavity and the membrane further having a second side distal the cavity. - View Dependent Claims (44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61)
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62. A method of making an ultrasonic transducer, the method comprising:
forming a covered cavity in a complementary metal oxide semiconductor (CMOS) wafer by sealing the cavity with a polysilicon or amorphous silicon membrane. - View Dependent Claims (63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78)
Specification