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COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) ULTRASONIC TRANSDUCERS AND METHODS FOR FORMING THE SAME

  • US 20140264660A1
  • Filed: 03/13/2014
  • Published: 09/18/2014
  • Est. Priority Date: 03/15/2013
  • Status: Active Grant
First Claim
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1. An apparatus, comprising:

  • an ultrasonic transducer; and

    an integrated circuit coupled to the ultrasonic transducer, the integrated circuit formed in a CMOS wafer,wherein the ultrasonic transducer comprises;

    a cavity formed in the CMOS wafer;

    a membrane formed of a material other than monocrystalline silicon overlying the cavity; and

    an electrical contact providing electrical connectivity between the membrane and the integrated circuit.

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