MAGNETIC JUNCTIONS HAVING INSERTION LAYERS AND MAGNETIC MEMORIES USING THE MAGNETIC JUNCTIONS
First Claim
1. A magnetic junction for use in a magnetic device comprising:
- a reference layer;
a nonmagnetic spacer layer; and
a free layer, the nonmagnetic spacer layer residing between the reference layer and the free layer, the magnetic junction being configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction; and
wherein a portion of the magnetic junction includes at least one magnetic substructure, the magnetic substructure including at least one Fe layer and at least one nonmagnetic insertion layer, the at least one Fe layer sharing at least one interface with the at least one nonmagnetic insertion layer, each of the at least one nonmagnetic insertion layer consisting of at least one of W, I, Hf, Bi, Zn, Mo, Ag, Cd, Os and In.
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Accused Products
Abstract
A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. A portion of the magnetic junction includes at least one magnetic substructure. The magnetic substructure includes at least one Fe layer and at least one nonmagnetic insertion layer. The at least one Fe layer shares at least one interface with the at least one nonmagnetic insertion layer. Each of the at least one nonmagnetic insertion layer consists of at least one of W, I, Hf, Bi, Zn, Mo, Ag, Cd, Os and In.
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Citations
31 Claims
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1. A magnetic junction for use in a magnetic device comprising:
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a reference layer; a nonmagnetic spacer layer; and a free layer, the nonmagnetic spacer layer residing between the reference layer and the free layer, the magnetic junction being configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction; and wherein a portion of the magnetic junction includes at least one magnetic substructure, the magnetic substructure including at least one Fe layer and at least one nonmagnetic insertion layer, the at least one Fe layer sharing at least one interface with the at least one nonmagnetic insertion layer, each of the at least one nonmagnetic insertion layer consisting of at least one of W, I, Hf, Bi, Zn, Mo, Ag, Cd, Os and In. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A magnetic memory comprising:
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a plurality of magnetic junctions, each of the plurality of magnetic junctions including a free layer; and at least one magnetic substructure adjacent to the plurality of magnetic junctions, the magnetic substructure including at least one magnetic layer interleaved with at least one nonmagnetic insertion layer, each of the at least one nonmagnetic insertion layer including at least one of W, I, Hf, Bi, Zn, Mo, Ag, Cd, Os and In, the at least one magnetic substructure configured to exert a spin-orbit interaction (SO) torque on the free layer due to a current passing through the at least one magnetic substructure in a direction substantially perpendicular to a direction between the at least one magnetic substructure and the free layer of a magnetic junction of the plurality of magnetic junctions, the free layer being configured to be switchable using at least the SO torque.
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16. A magnetic memory comprising:
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a plurality of magnetic junctions, each of the plurality of magnetic junctions including a free layer, a reference layer and a nonmagnetic spacer layer between the free layer and the reference layer; and at least one magnetic substructure adjacent to the plurality of magnetic junctions, the magnetic substructure including at least one magnetic layer interleaved with at least one nonmagnetic insertion layer, each of the at least one nonmagnetic insertion layer including at least one of W, I, Hf, Bi, Zn, Mo, Ag, Cd, Os and In, the at least one magnetic substructure configured to exert a spin-orbit interaction (SO) torque on the reference layer due to a current passing through the at least one magnetic substructure in a direction substantially perpendicular to a direction between the at least one magnetic substructure and the reference layer of a magnetic junction of the plurality of magnetic junctions.
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17. A magnetic memory comprising:
a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one magnetic junction, the at least one magnetic junction including a pinned layer, a nonmagnetic spacer layer, and a free layer, the nonmagnetic spacer layer residing between the pinned layer and the free layer, the magnetic junction being configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction, a portion of the magnetic junction including at least one magnetic substructure, the at least one magnetic substructure including at least one Fe layer and at least one nonmagnetic insertion layer, the at least one Fe layer sharing at least one interface with the at least one nonmagnetic insertion layer, each of the at least one nonmagnetic insertion layer consisting of at least one of W, I, Hf, Bi, Zn, Mo, Ag, Cd, Os and In. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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31. A method magnetic junction for use in a magnetic device comprising:
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providing a reference layer; providing a nonmagnetic spacer layer; providing a free layer, the nonmagnetic spacer layer residing between the reference layer and the free layer, the magnetic junction being configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction; and providing at least one magnetic substructure, a portion of the magnetic junction includes the at least one magnetic substructure, the magnetic substructure including at least one Fe layer and at least one nonmagnetic insertion layer, the at least one Fe layer sharing at least one interface with the at least one nonmagnetic insertion layer, each of the at least one nonmagnetic insertion layer consisting of at least one of W, I, Hf, Bi, Zn, Mo, Ag, Cd, Os and In.
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Specification