DEVICES INCLUDING A DIAMOND LAYER

• US 20140264723A1
• Filed: 10/28/2011
• Published: 09/18/2014
• Est. Priority Date: 10/28/2011
• Status: Active Grant

• Current Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Original Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Inventors: Liang, Di, Beausoleil, Raymond G.
• Granted Patent: US 9,711,534 B2
• Time in Patent Office: Days
• US Class Current: 257/507
• CPC Class Codes: G02B 6/122 Basic optical elements, e.g. light-guiding paths
• CPC Class Codes: H01L 21/02439 Materials
• CPC Class Codes: H01L 21/02444 Carbon, e.g. diamond-like carbon
• CPC Class Codes: H01L 21/02494 Structure
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02546 Arsenides
• CPC Class Codes: H01L 21/8213 the substrate being a semiconductor, using SiC technology H01L21/8258 takes precedence
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688

Abstract

A device includes a substrate layer, a diamond layer, and a device layer. The device layer is patterned. The diamond layer is to conform to a pattern associated with the device layer.

Claims

1. A device comprising:

a substrate layer;

a diamond layer coupled to the substrate layer; and

a device layer including a patterned structure separated from the substrate layer by the diamond layer, wherein the diamond layer is to conform to the patterned structure.

2. The device of claim 1, wherein a top surface of the device layer is to be coupled with a component associated with the patterned structure to interact with the patterned structure.

3. The device of claim 1, wherein an upper portion of the patterned structure is asymmetrically patterned with respect to a lower portion of the patterned structure.

4. The device of claim 1, wherein the device layer includes an insulated patterned structure encapsulated by a dielectric.

5. The device of claim 4, wherein the insulated patterned structure of the device layer is associated with a component that is at least one of i) thermally tuned, ii) thermally insensitive, and iii) non-heat-generating.

6. A Silicon-On-Diamond (SOD) device comprising:

a substrate layer;

a diamond layer coupled to the substrate layer; and

a silicon device layer patterned with a waveguide and coupled to the diamond layer, wherein the diamond layer is to conform to the waveguide.

7. The device of claim 6, wherein the diamond layer is coupled to the substrate layer via at least one intermediate material layer associated with a thermal conductivity greater than that of a transparent insulator.

8. The device of claim 6, wherein a top surface of the silicon device layer is patterned asymmetrically relative to a bottom surface of the silicon device layer, such that the waveguide is structured to provide a path for charge carriers associated with the waveguide to flow across a center of an optical mode region associated with the waveguide.

9. The device of claim 6, wherein the waveguide is associated with a single lateral hybrid mode and a component to be coupled with the waveguide, wherein a waveguide lateral dimension is narrower than a component lateral dimension.

10. The device of claim 6, wherein the diamond layer is to conform to the waveguide to form at least one of a diamond core waveguide, a diamond slot waveguide, a diamond rib waveguide, an inverted diamond rib waveguide, a diamond nanowire waveguide, an inverted diamond nanowire waveguide, and a stripe waveguide.

11. A device comprising:

a substrate layer;

a diamond layer coupled to the substrate layer;

a device layer including a patterned structure separated from the substrate layer by the diamond layer, wherein the diamond layer is to conform to the patterned structure; and

an insulated patterned structure encapsulated by a dielectric and separated from the substrate layer by the diamond layer, wherein the diamond layer is to conform to the dielectric.

12. The device of claim 11, wherein the dielectric includes an air gap.

13. The device of claim 11, further comprising a metal reflector associated with the dielectric, wherein the diamond layer is to conform to the dielectric via the metal reflector.

14. The device of claim 13, wherein the metal reflector is to provide a light reflection based on incident light passing through the dielectric, wherein the light reflection is associated with a specific phase relationship to the incident light based on a thickness of the dielectric.

15. The device of claim 11, wherein the device is a hybrid device including a Silicon on Diamond (SOD) portion associated with the device layer patterned structure and a Silicon on Insulator (SOI) portion associated with the insulated patterned structure, wherein the device is compatible with thermal tuning.