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Metal Capping Layer for Interconnect Applications

  • US 20140264872A1
  • Filed: 06/11/2013
  • Published: 09/18/2014
  • Est. Priority Date: 03/13/2013
  • Status: Abandoned Application
First Claim
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1. An integrated circuit structure comprising:

  • a substrate;

    a dielectric layer over the substrate;

    a conductive wiring in the dielectric layer;

    a first metallic capping layer over the conductive wiring; and

    a second metallic capping layer over the first metallic capping layer, wherein the second metallic capping layer has a width substantially the same as a width of the first metallic capping layer.

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