Metal Capping Layer for Interconnect Applications
First Claim
Patent Images
1. An integrated circuit structure comprising:
- a substrate;
a dielectric layer over the substrate;
a conductive wiring in the dielectric layer;
a first metallic capping layer over the conductive wiring; and
a second metallic capping layer over the first metallic capping layer, wherein the second metallic capping layer has a width substantially the same as a width of the first metallic capping layer.
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Abstract
An integrated circuit structure includes a semiconductor substrate and a dielectric layer over the semiconductor substrate. The integrated circuit structure further includes a conductive wiring in the dielectric layer. The integrated circuit structure also includes a first metallic capping layer over the conductive wiring and a second metallic capping layer over the first metallic capping layer. The second metallic capping layer has a width substantially the same as a width of the first metallic capping layer.
26 Citations
20 Claims
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1. An integrated circuit structure comprising:
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a substrate; a dielectric layer over the substrate; a conductive wiring in the dielectric layer; a first metallic capping layer over the conductive wiring; and a second metallic capping layer over the first metallic capping layer, wherein the second metallic capping layer has a width substantially the same as a width of the first metallic capping layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An integrated circuit structure comprising:
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a semiconductor substrate; a low-k dielectric layer over the semiconductor substrate; an opening extending from a top surface of the low-k dielectric layer into the low-k dielectric layer; a barrier layer lining the opening; a copper-containing conductive line in the opening and on the barrier layer; a second metallic capping layer over the copper-containing conductive line; and a first metallic capping layer positioned between the first metallic capping layer and the copper-containing conductive line, wherein the first metallic capping layer comprises a material different from a material of the second metallic capping layer. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A method, comprising:
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forming a dielectric layer over a semiconductor substrate; forming a copper line in the dielectric layer; forming a first metallic capping layer over the copper line; and forming a second metallic capping layer over the first metallic capping layer, wherein the second metallic capping layer has a width substantially the same as a width of the first metallic capping layer. - View Dependent Claims (17, 18, 19, 20)
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Specification