Interconnection Structure And Method For Semiconductor Device
First Claim
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1. A semiconductor device comprising:
- a substrate;
a first dielectric layer disposed over the substrate;
a metal structure disposed in the first dielectric layer and below a surface of the first dielectric layer, the metal structure having a shape that includes;
an upper portion with a first width; and
a lower portion with a second width, which is substantially larger than the first width, whereby a notch is formed in the metal structure; and
a second dielectric sub-structure positioned in the notch between the upper portion of the metal structure and the first dielectric layer.
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Abstract
A semiconductor device is disclosed. The device includes a substrate, a first dielectric layer disposed over the substrate and a metal structure disposed in the first dielectric layer and below a surface of the first dielectric layer. The metal structure has a such shape that having an upper portion with a first width and a lower portion with a second width. The second width is substantially larger than the first width. The semiconductor device also includes a sub-structure of a second dielectric positioned between the upper portion of the metal structure and the first dielectric layer.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a substrate; a first dielectric layer disposed over the substrate; a metal structure disposed in the first dielectric layer and below a surface of the first dielectric layer, the metal structure having a shape that includes; an upper portion with a first width; and a lower portion with a second width, which is substantially larger than the first width, whereby a notch is formed in the metal structure; and a second dielectric sub-structure positioned in the notch between the upper portion of the metal structure and the first dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for fabricating a semiconductor device, the method comprising:
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providing a substrate; depositing a first dielectric layer over the substrate; forming a first trench in the first dielectric layer; filling in the first trench with a first metal layer to form a metal structure with a first width; forming a notch in the metal structure and the first dielectric layer, wherein the notch defines an upper portion with a second width and a lower portion with the first width of the metal structure, and filling in the notch with a second dielectric layer. - View Dependent Claims (13, 14, 15, 16, 17, 19, 20)
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18. A method of forming a structure of a semiconductor device, the method comprising:
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providing a substrate; depositing a first dielectric layer over the substrate; forming a patterned first hard mask over the first dielectric layer; etching the first dielectric layer through the patterned first hard mask to form a first trench; filling in the first trench with a first metal layer to form a metal structure; forming a patterned second hard mask over the metal structure and the first dielectric layer; removing a portion of the metal structure and a portion of the first dielectric layer to form a notch, wherein the notch defines an upper portion and lower portion of the metal structure, further wherein a width of the upper portion is smaller than a width of the lower portion; filling in the notch with a second dielectric layer; depositing a third dielectric layer over the metal structure; forming a second trench in the third dielectric layer to expose at least a portion of the upper portion of the metal structure; and filling in the second trench with a second metal layer.
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Specification