Chamber Matching For Power Control Mode

• US 20140265851A1
• Filed: 05/23/2013
• Published: 09/18/2014
• Est. Priority Date: 03/14/2013
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Albarede, Luc
• Granted Patent: US 9,119,283 B2
• Time in Patent Office: Days
• US Class Current: 315/111.21
• CPC Class Codes: H01J 37/32183 Matching circuits
• CPC Class Codes: H01J 37/32899 Multiple chambers, e.g. cluster tools
• CPC Class Codes: H05H 1/46 using applied electromagnetic fields, e.g. high frequency or microwave energy H05H1/26 takes precedence
• CPC Class Codes: H05H 2242/26 Matching networks

Abstract

Systems and methods for performing chamber matching are described. One of the methods for performing chamber matching includes executing a first test within a first plasma chamber to measure a variable and executing a second test within a second plasma chamber to measure the variable. The first and second tests are executed based on one recipe. The method further includes determining a first relationship between the variable measured with the first test and power provided during the first test, determining a second relationship between the variable measured with the second test and power provided during the second test, and identifying power adjustment to apply to the second plasma chamber during a subsequent processing operation based on the first and second relationships. The power adjustment causes the second plasma chamber to perform the processing operation in a processing condition determined using the first plasma chamber.

Claims

1. A method for performing chamber-to-chamber matching, the method comprising:

executing a first test within a first plasma chamber to measure a variable;

executing a second test within a second plasma chamber to measure the variable, wherein the first and second tests are executed based on one recipe;

determining a first relationship between the variable measured with the first test and power provided during the first test;

determining a second relationship between the variable measured with the second test and power provided during the second test;

identifying power adjustment to apply to the second plasma chamber during a subsequent processing operation based on the first and second relationships, the power adjustment causing the second plasma chamber to perform the processing operation in a processing condition determined using the first plasma chamber.

2. The system of claim 1, wherein the variable is current or voltage.

3. The system of claim 1, wherein the variable is measured during the first plasma test using a probe coupled to a chuck, the chuck located within the first plasma chamber.

4. The system of claim 1, wherein the variable is measured during the second plasma test using a probe coupled to a chuck, the chuck located within the second plasma chamber.

5. The system of claim 1, wherein the variable is measured during the first plasma test using a probe, the probe coupled to a point between a radio frequency (RF) generator and a wafer, the RF generator coupled via an RF cable to an impedance matching circuit, the impedance matching circuit coupled vi an RF transmission line to the first plasma chamber, the wafer placed on a surface of the chuck.

6. The system of claim 1, wherein the recipe includes a pressure within the first plasma chamber, a temperature within the first plasma chamber, power of an RF signal provided to the first plasma chamber, frequency of the RF signal, and gap between an upper electrode of the first plasma chamber and a lower electrode of the first plasma chamber.

7. The system of claim 1, wherein the recipe includes a pressure within the second plasma chamber, a temperature within the second plasma chamber, power of an RF signal provided to the second plasma chamber, frequency of the RF signal, and gap between an upper electrode of the second plasma chamber and a lower electrode of the second plasma chamber.

8. The system of claim 1, wherein the first relationship is a straight line.

9. The system of claim 1, wherein the second relationship is a straight line.

10. The system of claim 1, wherein the power adjustment is a difference between the power provided during the first test and the power provided during the second test.

11. The system of claim 1, wherein the subsequent processing operation includes etching, deposition, or cleaning of a wafer placed within the second plasma chamber.

12. The system of claim 1, wherein the processing condition includes a value of a function of the variable, the value achieved during the first test when an amount of the power is provided to the first plasma chamber during the first test.

13. The system of claim 1, wherein the first plasma chamber has a higher yield than the second plasma chamber.

14. The system of claim 1, wherein each of the first and second tests includes a no plasma test.

15. The system of claim 14, wherein during the no plasma test, an amount of pressure within the first plasma chamber is controlled to avoid striking plasma within the first plasma chamber and an amount of pressure within the second plasma chamber is controlled to avoid striking plasma within the second plasma chamber.

16. A method for performing intra-chamber matching, the method comprising:

executing a first test to measure a variable associated with a plasma chamber, the plasma chamber is in a first condition during execution of the first test;

executing a second test to measure the variable associated with the plasma chamber, the plasma chamber is in a second condition during execution of the second test;

determining a first relationship between the variable measured using the first test and power provided during the first test;

determining a second relationship between the variable measured using the second test and power provided during the second test;

identifying power adjustment to apply to the plasma chamber during a subsequent processing operation based on the first and second relationships, the power adjustment causing the plasma chamber to perform the processing operation in a processing condition, the processing condition determined when the plasma chamber is in the first condition.

17. The method of claim 16, wherein the second condition occurs in time after occurrence of the first condition.

18. The method of claim 16, wherein the second condition occurs after performing processing on a wafer placed within the plasma chamber, the first condition occurring before performing the processing.

19. A plasma system for performing chamber-to-chamber matching, the plasma system comprising:

a first plasma chamber used to execute a first test to measure a variable;

a radio frequency (RF) transmission line coupled to the first plasma chamber for communicating an RF signal to the first plasma chamber;

an impedance matching circuit coupled to the RF transmission line;

an RF generator coupled to the impedance matching circuit for supplying the RF signal;

a second plasma chamber used to execute a second test to measure the variable, wherein the first and second tests are executed based on one recipe, wherein the second test is executed after decoupling the first plasma chamber from the RF transmission line and coupling the second plasma chamber to the RF transmission line;

a host system including a processor, the host system coupled to the RF generator, the processor configured to;

determine a first relationship between the variable measured with the first test and power provided during the first test;

determine a second relationship between the variable measured with the second test and power provided during the second test; and

identify power adjustment to apply to the second plasma chamber during a subsequent processing operation based on the first and second relationships, the power adjustment causing the second plasma chamber to perform the processing operation in a processing condition determined using the first plasma chamber.

20. A plasma system for performing intra-chamber matching, the plasma system comprising:

a plasma chamber used to execute a first test to measure a variable, the plasma chamber is in a first condition during execution of the first test,

the plasma chamber used to execute a second test to measure the variable, the plasma chamber is in a second condition during execution of the second test;

a radio frequency (RF) transmission line coupled to the plasma chamber for communicating an RF signal to the plasma chamber;

an impedance matching circuit coupled to the RF transmission line;

an RF generator coupled to the impedance matching circuit for supplying the RF signal; and

a host system including a processor, the host system coupled to the RF generator, the processor configured to;

determine a first relationship between the variable measured using the first test and power provided during the first test;

determine a second relationship between the variable measured using the second test and power provided during the second test;

identify power adjustment to apply to the plasma chamber during a subsequent processing operation based on the first and second relationships, the power adjustment causing the plasma chamber to perform the processing operation in a processing condition, the processing condition determined when the plasma chamber is in the first condition.