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MEMORY CELL WITH VOLATILE AND NON-VOLATILE STORAGE

  • US 20140269003A1
  • Filed: 06/14/2012
  • Published: 09/18/2014
  • Est. Priority Date: 06/15/2011
  • Status: Active Grant
First Claim
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1. A non-volatile memory element comprising:

  • first and second transistors forming an inverter coupled between a first storage node and an output of the memory element;

    a third transistor coupled between the first storage node and a first supply voltage and comprising a control terminal coupled to said output;

    a first resistance switching element coupled in series with said third transistor and programmed to have one of first and second resistances representing a non-volatile data bit;

    a fourth transistor coupled between said storage node a second supply voltage; and

    control circuitry adapted to activate said third transistor at the start of a transfer phase of said non-volatile data bit to said storage node, and to control said fourth transistor to couple said storage node to said second supply voltage during said transfer phase.

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