MEMORY CELL WITH VOLATILE AND NON-VOLATILE STORAGE

• US 20140269003A1
• Filed: 06/14/2012
• Published: 09/18/2014
• Est. Priority Date: 06/15/2011
• Status: Active Grant

• Current Assignee: Centre National De La Recherche Scientifique, Universite De Montpellier I
• Original Assignee: Centre National De La Recherche Scientifique, Universite Montpellier II
• Inventors: Guillemenet, Yoann, Torres, Lionel
• Granted Patent: US 9,117,521 B2
• Time in Patent Office: Days
• US Class Current: 365/148
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 13/0002 using resistive RAM [RRAM] elements
• CPC Class Codes: G11C 13/0069 Writing or programming circuits or methods
• CPC Class Codes: G11C 14/0081 and the nonvolatile element is a magnetic RAM [MRAM] element or ferromagnetic cell
• CPC Class Codes: G11C 14/009 and the nonvolatile element is a resistive RAM element, i.e. programmable resistors, e.g. formed of phase change or chalcogenide material
• CPC Class Codes: G11C 7/106 Data output latches

Abstract

The invention concerns a non-volatile memory element comprising: first and second transistors (106, 108) forming an inverter (104) coupled between a first storage node (112) and an output (110) of the memory element; a third transistor (116) coupled between the first storage node (112) and a first supply voltage (GND, V_DD) and comprising a control terminal coupled to said output; a first resistance switching element (102) coupled in series with said third transistor and programmed to have one of first and second resistances (R_min, R_max) representing a non-volatile data bit; a fourth transistor (118) coupled between said storage node (112) a second supply voltage (V_DD, GND); and control circuitry (130) adapted to activate said third transistor at the start of a transfer phase of said non-volatile data bit to said storage node, and to control said fourth transistor to couple said storage node to said second supply voltage during said transfer phase.

Claims

1. A non-volatile memory element comprising:

first and second transistors forming an inverter coupled between a first storage node and an output of the memory element;

a third transistor coupled between the first storage node and a first supply voltage and comprising a control terminal coupled to said output;

a first resistance switching element coupled in series with said third transistor and programmed to have one of first and second resistances representing a non-volatile data bit;

a fourth transistor coupled between said storage node a second supply voltage; and

control circuitry adapted to activate said third transistor at the start of a transfer phase of said non-volatile data bit to said storage node, and to control said fourth transistor to couple said storage node to said second supply voltage during said transfer phase.

2. The memory element of claim 1, further comprising a fifth transistor coupled between said first storage node and an input line for receiving a data bit to be stored at said first storage node.

3. The memory element of claim 1, wherein said resistance switching element is coupled between said third transistor and said first supply voltage.

4. The memory element of claim 1, wherein said resistance switching element is coupled between said fourth transistor and said second supply voltage.

5. The memory device of claim 1, further comprising programming circuitry adapted to program the resistances of said resistance switching element based on input data.

6. The memory device of claim 5, further comprising a fifth transistor coupled in series with said resistance switching element and adapted to heat said resistance switching element during a programming phase.

7. The memory device of claim 1, wherein said fourth transistor is adapted to have a lower threshold voltage than said third transistor.

8. The memory device of claim 1, wherein said first resistance switching element is one of:

an oxide resistive element;

a conductive bridging element;

a phase change element;

a programmable metallization element;

a spin-torque-transfer element;

a thermally assisted switching element and

a field-induced magnetic switching element.

9. A flip-flop comprising a pair of memory elements, each of the memory elements comprising the memory element of claim 1, wherein a first of said memory elements forming a master latch has its storage node coupled to a data input of said latch by a fifth transistor, and wherein a second of said memory elements forming a slave latch has its storage node coupled via a sixth transistor to said inverter of said first memory element.

10. The flip-flop of claim 9, wherein said flip-flop further comprises an initialization transistor coupled between the gate terminal of said third transistor of said first memory element and said second supply voltage.

11. The flip-flop of claim 9, wherein one of said pair of memory elements comprises its resistance switching element coupled between said third transistor and said first supply voltage and the other of said pair of memory elements comprises its resistance switching element coupled between said fourth transistor and said second supply voltage.

12. A field programmable gate array comprising at least one multiplexer comprising an input coupled to the memory element of claim 1.

13. A field programmable gate array comprising:

a plurality of configurable logic blocks; and

at least one switching block adapted to interconnect said plurality of configurable logic blocks, wherein said at least one switching block comprises the memory element claim 1.

15. A field programmable gate array comprising at least one multiplexer comprising an input coupled to the flip-flop of claim 9.

16. A field programmable gate array comprising:

a plurality of configurable logic blocks; and

at least one switching block adapted to interconnect said plurality of configurable logic blocks, wherein said at least one switching block comprises the flip-flop of claim 9.

14. A method of transferring a data value from non-volatile storage of a memory element to a volatile storage node of said memory element, wherein the memory element comprises first and second transistors forming an inverter coupled between a storage node and an output of the memory element, a third transistor coupled between the storage node and a first supply voltage and comprising a control terminal coupled to said output, and a first resistance switching element coupled in series with said third transistor and programmed to have one of first and second resistances representing a non-volatile data bit, the method comprising:

activating said third transistor; and

coupling said storage node to a second supply voltage while said third transistor is activated.