Method for Improving Data Retention of ReRAM Chips Operating at Low Operating Temperatures
First Claim
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1. A method comprisingproviding a memory device, wherein the memory device operates at an operating temperature;
- heating the memory device to a programming temperature, wherein the programming temperature is greater than the operating temperature; and
programming a switching element of the memory device during the heating.
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Abstract
Programming a resistive memory structure at a temperature well above the operating temperature can create a defect distribution with higher stability, leading to a potential improvement of the retention time. The programming temperature can be up to 100 C above the operating temperature. The memory chip can include embedded heaters in the chip package, allowing for heating the memory cells before the programming operations.
9 Citations
20 Claims
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1. A method comprising
providing a memory device, wherein the memory device operates at an operating temperature; -
heating the memory device to a programming temperature, wherein the programming temperature is greater than the operating temperature; and programming a switching element of the memory device during the heating. - View Dependent Claims (2, 3, 4)
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5. A method comprising
forming a memory structure, wherein the memory structure comprises an insulator layer disposed between two electrode layers, wherein the insulator layer is operable as a switching layer; -
heating the memory structure; while heating the memory structure, applying a voltage or current to the two electrode layers to set or reset the memory structure; and after applying the voltage or current, stopping the heating of the memory structure. - View Dependent Claims (6, 7, 8, 9, 10, 11)
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12. A memory device comprising
a memory array, wherein the memory array comprises a plurality of memory structures, wherein each memory structure comprises an insulator layer disposed between two electrode layers, wherein the insulator layer is operable as a switching layer; -
a heater element disposed in a vicinity of the memory array, wherein the heater element is configured to heat the plurality of memory structures; and a temperature sensor disposed in a vicinity of the memory array. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification