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ASYMMETRIC SENSING AMPLIFIER, MEMORY DEVICE AND DESIGNING METHOD

  • US 20140269110A1
  • Filed: 03/15/2013
  • Published: 09/18/2014
  • Est. Priority Date: 03/15/2013
  • Status: Active Grant
First Claim
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1. A sensing amplifier for a memory device, the memory device comprising first and second bit lines and at least one memory cell coupled to the first and second bit lines, the sensing amplifier comprising:

  • a first node configured to be coupled to the first bit line;

    a second node configured to be coupled to the second bit line;

    an input device coupled to the first and second nodes, the input device configured togenerate a first current pulling the first node toward a predetermined voltage in response to a first datum read out from the memory cell, andgenerate a second current pulling the second node toward the predetermined voltage in response to a second datum read out from the memory cell; and

    an output device coupled to the first node, the output device configured to output the first or second datum read out from the memory cell;

    wherein the first current is greater than the second current.

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