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Atomic Layer Deposition Of Films Comprising Si(C)N Using Hydrazine, Azide And/Or Silyl Amine Derivatives

  • US 20140273526A1
  • Filed: 03/12/2014
  • Published: 09/18/2014
  • Est. Priority Date: 03/12/2013
  • Status: Abandoned Application
First Claim
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1. A method of depositing a film comprising Si(C)N, the method comprising exposing a substrate surface to a silicon precursor and a co-reactant, wherein the silicon precursor contains at least one Si—

  • X bond, wherein X is a halogen, and the co-reactant comprises a compound selected from the group consisting of N═

    N═

    N—

    R, R2N—

    NR2, and (R3Si)qNH3-q, wherein q has a value of between 1 and 3, and each R is independently selected from silyl, monomethyl silyl, dimethyl silyl and trimethyl silyl, C1-C6 substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics.

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