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Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES

  • US 20140273531A1
  • Filed: 10/24/2013
  • Published: 09/18/2014
  • Est. Priority Date: 03/14/2013
  • Status: Abandoned Application
First Claim
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1. A method of depositing a silicon nitride thin film on a substrate in a reaction space comprising:

  • (a) introducing a vapor-phase silicon reactant comprising iodine into the reaction space so that the silicon precursor is adsorbed to a surface of the substrate;

    (b) removing excess silicon reactant and reaction byproducts;

    (c) contacting the adsorbed silicon precursor with a reactive species generated by a plasma from a nitrogen precursor;

    (d) removing excess reactive species and reaction byproducts;

    wherein steps (a) through (d) are repeated until a silicon nitride film of a desired thickness is formed; and

    wherein the adsorbed silicon precursor is not contacted with a reactive species generated by a plasma from Ar.

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