Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES
First Claim
Patent Images
1. A method of depositing a silicon nitride thin film on a substrate in a reaction space comprising:
- (a) introducing a vapor-phase silicon reactant comprising iodine into the reaction space so that the silicon precursor is adsorbed to a surface of the substrate;
(b) removing excess silicon reactant and reaction byproducts;
(c) contacting the adsorbed silicon precursor with a reactive species generated by a plasma from a nitrogen precursor;
(d) removing excess reactive species and reaction byproducts;
wherein steps (a) through (d) are repeated until a silicon nitride film of a desired thickness is formed; and
wherein the adsorbed silicon precursor is not contacted with a reactive species generated by a plasma from Ar.
1 Assignment
0 Petitions
Accused Products
Abstract
Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).
383 Citations
20 Claims
-
1. A method of depositing a silicon nitride thin film on a substrate in a reaction space comprising:
-
(a) introducing a vapor-phase silicon reactant comprising iodine into the reaction space so that the silicon precursor is adsorbed to a surface of the substrate; (b) removing excess silicon reactant and reaction byproducts; (c) contacting the adsorbed silicon precursor with a reactive species generated by a plasma from a nitrogen precursor; (d) removing excess reactive species and reaction byproducts; wherein steps (a) through (d) are repeated until a silicon nitride film of a desired thickness is formed; and wherein the adsorbed silicon precursor is not contacted with a reactive species generated by a plasma from Ar. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
-
-
19. A method of depositing a silicon nitride thin film on a substrate comprising:
-
(a) exposing the substrate to a vapor-phase silicon precursor comprising iodine so that the silicon precursor is adsorbed to a surface of the substrate; (b) exposing the substrate to a purge gas and/or a vacuum to remove excess silicon precursor and reaction byproducts from the substrate surface; (c) contacting the adsorbed silicon precursor with species generated by a nitrogen containing plasma; and (d) exposing the substrate to a purge gas and/or a vacuum to remove the species of a nitrogen containing plasma and reaction byproducts from the substrate surface and from the proximity of the substrate surface; wherein steps (a) through (d) are repeated until a silicon nitride film of a desired thickness is formed; and wherein the species generated in step (c) do not comprise species of Ar. - View Dependent Claims (20)
-
Specification