SEMICONDUCTOR DEVICE

• US 20140284783A1
• Filed: 09/13/2013
• Published: 09/25/2014
• Est. Priority Date: 03/22/2013
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: SAYAMA, Satoshi
• Application Number:
  US14/026,195
• Publication Number:
  US 20140284783A1
• Time in Patent Office: Days
• US Class Current: 257/690
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 23/295 containing a filler H01L23/296 takes precedence
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/34 Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements thermal treatment apparatus H01L21/00
• CPC Class Codes: H01L 23/4334 Auxiliary members in encapsulations H01L23/49568 takes precedence
• CPC Class Codes: H01L 23/49503 characterised by the die pad
• CPC Class Codes: H01L 23/49541 Geometry of the lead-frame
• CPC Class Codes: H01L 23/49548 Cross section geometry H01L23/49562 takes precedence
• CPC Class Codes: H01L 23/49568 specifically adapted to facilitate heat dissipation
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/18301 being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part

Abstract

According to one embodiment, a semiconductor device includes: a heat sink; a semiconductor element provided on a mounting surface of the heat sink; and a sealing body wrapping the heat sink and the semiconductor element, a thickness of a portion of the sealing body on a side of a surface on an opposite side to the mounting surface of the heat sink being smaller than a thickness of a portion of the sealing body on the mounting surface side of the heat sink. A first concave-convex is provided on the surface on an opposite side to the mounting surface of the heat sink. A second concave-convex larger than the first concave-convex is provided on a surface crossing the surface on an opposite side to the mounting surface of the heat sink.

Claims

1. A semiconductor device comprising:

a heat sink;

a semiconductor element provided on a mounting surface of the heat sink; and

a sealing body wrapping the heat sink and the semiconductor element, a thickness of a portion of the sealing body on a side of a surface on an opposite side to the mounting surface of the heat sink being smaller than a thickness of a portion of the sealing body on the mounting surface side of the heat sink,

a first concave-convex being provided on the surface on an opposite side to the mounting surface of the heat sink,

a second concave-convex larger than the first concave-convex being provided on a surface crossing the surface on an opposite side to the mounting surface of the heat sink.

2. The device according to claim 1, wherein a surface roughness of the surface provided with the second concave-convex of the heat sink is larger than a surface roughness of the surface provided with the first concave-convex.

3. The device according to claim 2, wherein a linear expansion coefficient of the sealing body is larger than a linear expansion coefficient of the heat sink.

4. The device according to claim 3, wherein the sealing body contains a resin and a filler of a ceramic.

5. The device according to claim 4, wherein

the sealing body has a first portion on a side of a surface on an opposite side to the mounting surface of the heat sink and a second portion including at least part of a portion on the mounting surface side of the heat sink and

a material of the second portion is different from a material of the first portion.

6. The device according to claim 5, wherein a thermal conductivity of the first portion is higher than a thermal conductivity of the second portion.

7. The device according to claim 6, wherein a surface on an opposite side to the mounting surface of the sealing body is in thermal contact with a heat sink.

8. The device according to claim 6, wherein a percentage of the filler contained in the first portion is higher than a percentage of the filler contained in the second portion.

9. The device according to claim 6, wherein a linear expansion coefficient of the second portion is smaller than a linear expansion coefficient of the first portion.

10. The device according to claim 1, wherein the thickness of a portion of the sealing body on a side of a surface on an opposite side to the mounting surface of the heat sink is not less than 0.1 mm and not more than 0.5 mm.

11. The device according to claim 2, wherein a surface roughness of the surface provided with the second concave-convex of the heat sink is ten times or more of a surface roughness of the surface provided with the first concave-convex.

12. The device according to claim 1, wherein the second concave-convex is in a trench configuration extending in a direction parallel to the mounting surface.

13. The device according to claim 1, wherein an angle between the crossing surface and an upper wall surface of a concave of the second concave-convex is smaller than 90 degrees.

14. The device according to claim 1, further comprising:

a first lead electrically connected to the semiconductor element; and

a second lead electrically connected to the heat sink.

15. The device according to claim 1, wherein a linear expansion coefficient of the sealing body is larger than a linear expansion coefficient of the heat sink.

16. The device according to claim 1, wherein the sealing body contains a resin and a filler of a ceramic.

17. The device according to claim 1, wherein

the sealing body has a first portion on a side of a surface on an opposite side to the mounting surface of the heat sink and a second portion including at least part of a portion on the mounting surface side of the heat sink and

a material of the second portion is different from a material of the first portion.

18. The device according to claim 17, wherein a thermal conductivity of the first portion is higher than a thermal conductivity of the second portion.

19. The device according to claim 1, usable such that a surface on an opposite side to the mounting surface of the sealing body is in thermal contact with a heat dissipation means.

20. A semiconductor device comprising:

a heat sink;

a semiconductor element provided on a mounting surface of the heat sink; and

a sealing body wrapping the heat sink and the semiconductor element, a thickness of a portion of the sealing body on a side of a surface on an opposite side to the mounting surface of the heat sink being smaller than a thickness of a portion of the sealing body on the mounting surface side of the heat sink,

the sealing body having a first portion on a side of a surface on an opposite side to the mounting surface of the heat sink and a second portion including at least part of a portion on the mounting surface side of the heat sink,

a material of the second portion being different from a material of the first portion,

a thermal conductivity of the first portion being higher than a thermal conductivity of the second portion.