SEMICONDUCTOR MEMORY DEVICE, CONTROLLER, AND MEMORY SYSTEM
First Claim
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1. A semiconductor memory device comprising:
- a memory cell array that is capable of storing data in a nonvolatile manner; and
a control section configured to control access to the memory cell array,wherein the memory cell array stores management data redundantly in a plurality of pages, andwherein the control section is configured to execute a reading operation on the plurality of pages that store the management data to read the management data.
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Abstract
A semiconductor memory device includes a memory cell array that is capable of storing data in a nonvolatile manner, and a control section that controls data access to the memory cell array. The memory cell array stores the same data redundantly in a plurality of pages. The control section executes a reading operation on the plurality of pages that store the same data redundantly to read the data. The data that is stored redundantly may be management data or user data.
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Citations
20 Claims
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1. A semiconductor memory device comprising:
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a memory cell array that is capable of storing data in a nonvolatile manner; and a control section configured to control access to the memory cell array, wherein the memory cell array stores management data redundantly in a plurality of pages, and wherein the control section is configured to execute a reading operation on the plurality of pages that store the management data to read the management data. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A controller that controls the semiconductor memory device having a first block of memory cells all of which are erased together during an erasing operation and a second block of memory cells all of which are erased together during an erasing operation, comprising:
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a first control section configured to control access to the memory cell array; a second control section configured to read defect information of the memory cells in the semiconductor memory device; and an internal memory that retains the defect information, wherein the second control section is configured to write data redundantly in a plurality of pages according to the defect information. - View Dependent Claims (11, 12, 13, 14)
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15. A method of accessing management data of a semiconductor memory device having a memory cell array that is capable of storing data in a nonvolatile manner and a control section configured to control access to the memory cell array, said method comprising:
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upon power on, executing a reading operation on the plurality of pages that redundantly store management data to read the management data; and storing the management data in a register. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification