Deposition Method and Deposition Apparatus
First Claim
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1. A deposition method, comprising:
- etching a natural oxide film in an etching chamber, the natural oxide film being formed on a surface of a silicon substrate;
transporting the silicon substrate from the etching chamber to a deposition chamber under vacuum;
cleaning the surface of the silicon substrate in the deposition chamber; and
causing a film to grow on the cleaned surface of the silicon substrate in the deposition chamber, the film including at least one of silicon and germanium.
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Abstract
[Object] To provide a deposition method and a deposition apparatus, which are capable of cleaning a surface of a silicon substrate and causing a single crystal film having excellent crystallinity to grow on the surface.
[Solving Means] A deposition method according to an embodiment of the present invention includes a process of etching a natural oxide film formed on a surface of a silicon substrate. The surface of the silicon substrate is cleaned. A film is caused to grow on the cleaned surface of the silicon substrate, the film including at least one of silicon and germanium.
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Citations
16 Claims
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1. A deposition method, comprising:
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etching a natural oxide film in an etching chamber, the natural oxide film being formed on a surface of a silicon substrate; transporting the silicon substrate from the etching chamber to a deposition chamber under vacuum; cleaning the surface of the silicon substrate in the deposition chamber; and causing a film to grow on the cleaned surface of the silicon substrate in the deposition chamber, the film including at least one of silicon and germanium. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A deposition apparatus, comprising:
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an etching chamber including a first supplying mechanism that supplies a first reaction gas for etching a natural oxide film formed on a surface of a silicon substrate; a deposition chamber including a second supplying mechanism that supplies a second reaction gas for cleaning the surface of the silicon substrate, a third supplying mechanism that supplies a raw material gas including at least one of silicon and germanium to the surface of the silicon substrate, and a heating mechanism that heats the silicon substrate; and a transporting mechanism that is capable of transporting the silicon substrate from the etching chamber to the deposition chamber under vacuum. - View Dependent Claims (11, 12, 13, 14, 15)
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16-17. -17. (canceled)
Specification