Deposition Method and Deposition Apparatus

• US 20140287588A1
• Filed: 04/26/2013
• Published: 09/25/2014
• Est. Priority Date: 05/16/2012
• Status: Abandoned Application

• Current Assignee: Ulvac Incorporated
• Original Assignee: Ulvac Incorporated
• Inventors: Takahashi, Seiichi
• Application Number:
  US14/347,537
• Publication Number:
  US 20140287588A1
• Time in Patent Office: Days
• US Class Current: 438/694
• CPC Class Codes: C23C 16/0227 by cleaning or etching
• CPC Class Codes: C23C 16/0236 by etching with a reactive gas
• CPC Class Codes: C23C 16/0245 by etching with a plasma
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 25/186 being specially pre-treated by, e.g. chemical or physical means
• CPC Class Codes: C30B 29/06 Silicon
• CPC Class Codes: C30B 29/08 Germanium
• CPC Class Codes: C30B 35/00 Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
• CPC Class Codes: H01L 21/02046 Dry cleaning only H01L21/02085 takes precedence
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0245 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02518 Deposited layers
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041
• CPC Class Codes: H01L 21/02661 In-situ cleaning
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/67161 characterized by the layout of the process chambers
• CPC Class Codes: H01L 21/6719 characterized by the construction of the processing chambers, e.g. modular processing chambers
• CPC Class Codes: H01L 21/67207 comprising a chamber adapted to a particular process

Abstract

[Object] To provide a deposition method and a deposition apparatus, which are capable of cleaning a surface of a silicon substrate and causing a single crystal film having excellent crystallinity to grow on the surface.

[Solving Means] A deposition method according to an embodiment of the present invention includes a process of etching a natural oxide film formed on a surface of a silicon substrate. The surface of the silicon substrate is cleaned. A film is caused to grow on the cleaned surface of the silicon substrate, the film including at least one of silicon and germanium.

Claims

1. A deposition method, comprising:

etching a natural oxide film in an etching chamber, the natural oxide film being formed on a surface of a silicon substrate;

transporting the silicon substrate from the etching chamber to a deposition chamber under vacuum;

cleaning the surface of the silicon substrate in the deposition chamber; and

causing a film to grow on the cleaned surface of the silicon substrate in the deposition chamber, the film including at least one of silicon and germanium.

2. The deposition method according to claim 1, wherein

in the process of cleaning the surface of the silicon substrate, a gas including a hydrogen radical is used to clean the surface of the silicon substrate.

3. The deposition method according to claim 1, wherein

in the process of cleaning the surface of the silicon substrate, a deposition gas is used to clean the surface of the silicon substrate.

4. The deposition method according to claim 3, wherein

in the process of causing a film to grow, a silane-based gas is used to cause a film including silicon to grow on the surface of the silicon substrate, and

in the process of cleaning the surface of the silicon substrate, the silane-based gas is used to clean the surface of the silicon substrate.

5. The deposition method according to claim 4, wherein

in the process of causing a film to grow, the silane-based gas having a first flow rate is used to cause a film including silicon on the surface of the silicon substrate, and

in the process of cleaning the surface of the silicon substrate, the silane-based gas having a second flow rate is used to clean the surface of the silicon substrate, the second flow rate being less than the first flow rate.

6. The deposition method according to claim 3, wherein

in the process of causing a film to grow, a germane-based gas is used to cause a film including germanium to grow on the surface of the silicon substrate, and

in the process of cleaning the surface of the silicon substrate, the germane-based gas is used to clean the surface of the silicon substrate.

7. The deposition method according to claim 1, wherein

in the processes of cleaning the surface of the silicon substrate and causing a film to grow, the silicon substrate is heated to not more than 800°

C.

8. The deposition method according to claim 1, wherein

in the process of etching a natural oxide film, the natural oxide film is converted into volatile ammonium fluorosilicate by causing the natural oxide film to react with an ammonium fluoride gas.

9. The deposition method according to claim 1, wherein

in the processes of cleaning the surface of the silicon substrate, surfaces of a plurality of silicon substrates are cleaned at the same time,

in the process of causing a film to grow, films are caused to grow on the plurality of silicon substrates at the same time.

10. A deposition apparatus, comprising:

an etching chamber including a first supplying mechanism that supplies a first reaction gas for etching a natural oxide film formed on a surface of a silicon substrate;

a deposition chamber including

a second supplying mechanism that supplies a second reaction gas for cleaning the surface of the silicon substrate,

a third supplying mechanism that supplies a raw material gas including at least one of silicon and germanium to the surface of the silicon substrate, and

a heating mechanism that heats the silicon substrate; and

a transporting mechanism that is capable of transporting the silicon substrate from the etching chamber to the deposition chamber under vacuum.

11. The deposition apparatus according to claim 10, wherein

the second supplying mechanism includes a first supplying unit that is capable of supplying a hydrogen radical.

12. The deposition apparatus according to claim 11, wherein

the second supplying mechanism includes a second supplying unit that is capable of supplying a silane-based gas.

13. The deposition apparatus according to claim 10, wherein the first supplying mechanism includes:

a third supplying unit that is capable of supplying a nitrogen fluoride gas, and

a fourth supplying unit that is capable of supplying a hydrogen radical.

14. The deposition apparatus according to claim 10, wherein the heating mechanism is configured to heat inside of the deposition chamber to not more than 800°

C.

15. The deposition apparatus according to claim 10, wherein the etching chamber and the deposition chamber include respective substrate holders configured to be capable of holding a plurality of silicon substrates.

16-17. -17. (canceled)